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Volumn 42, Issue 4 B, 2003, Pages 2426-2428
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Tunneling barrier structures in room-temperature operating silicon single-electron and single-hole transistors
a
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Author keywords
Coulomb blockade oscillation; Room temperature operation; Silicon single electron transistor; Silicon single hole transistor; Tunneling barrier structure; Ultranarrow channel
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Indexed keywords
BAND STRUCTURE;
COULOMB BLOCKADE;
ELECTRON TUNNELING;
OSCILLATIONS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE STRUCTURES;
THERMAL EFFECTS;
SINGLE ELECTRON TRANSISTORS;
SINGLE HOLE TRANSISTORS;
TUNNELING BARRIER STRUCTURES;
ULTRANARROW CHANNEL;
VALENCE BAND;
MOSFET DEVICES;
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EID: 0038346863
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (31)
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References (12)
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