Silicon single electron transistors with SOI and MOSFET structures: The role of access resistances

IEEE Transactions on Nanotechnology

Volumn 2, Issue 4, 2003, Pages 308-313

  Jehl, X ^a   Sanquer, M ^a   Bertrand, G ^b   Guegan G ^b   Deleonibus, S ^b   Fraboulet, D ^b  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

Author keywords

Cryogenic electronics; MOSFETs; Nanotechnology; Quantum dots; Quantum effect semiconductor devices

Indexed keywords

CRYOGENICS; ELECTRIC RESISTANCE; ELECTRON TRANSITIONS; GATES (TRANSISTOR); NANOTECHNOLOGY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON ON INSULATOR TECHNOLOGY;

QUANTUM EFFECT SEMICONDUCTOR DEVICES; SILICON SINGLE ELECTRON TRANSISTORS;

MOSFET DEVICES;

EID: 3042803437     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.820512     Document Type: Conference Paper

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