Fabrication and characterization of single electron transistor on SOI

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1647-1651

  Wang, Q ^a   Chen, Y F ^b   Long, S B ^a   Niu, J B ^a   Wang, C S ^a   Jia, R ^a   Chen, B Q ^a   Liu, M ^a   Ye, T C ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

Coulomb blockade; Coulomb staircase; Electron beam lithography; Reactive ion etching; Silicon on insulator (SOI); Single electron transistor

Indexed keywords

ANISOTROPY; COULOMB BLOCKADE; ELECTRON BEAM LITHOGRAPHY; REACTIVE ION ETCHING; SILICON ON INSULATOR TECHNOLOGY;

COULOMB STAIRCASE; DRY-ETCH; METEOROLOGICAL MEASUREMENT; SINGLE ELECTRON TRANSISTOR;

TRANSISTORS;

EID: 34247610404     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.261     Document Type: Article

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