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Volumn 40, Issue 10, 2001, Pages 5837-5840
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Modelling of structural and threshold voltage characteristics of randomly doped silicon nanowires in the Coulomb-blockade regime
a
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Author keywords
Coulomb blockade; Monte Carlo simulation; Random ionized dopant; Silicon nanowire; Single electron tunneling; Thomas Fermi approximation
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Indexed keywords
COMPUTER SIMULATION;
COULOMB BLOCKADE;
ELECTRON TRANSPORT PROPERTIES;
ELECTRON TUNNELING;
IONIZATION;
MONTE CARLO METHODS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MODELS;
RANDOM IONIZED DOPANT;
SILICON NANOWIRES;
THOMAS-FERMI APPROXIMATION;
THRESHOLD VOLTAGE CHARACTERISTICS;
ELECTRIC WIRE;
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EID: 0035484738
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.40.5837 Document Type: Article |
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Times cited : (55)
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References (13)
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