Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature

Applied Physics Letters

Volumn 91, Issue 5, 2007, Pages

  Miyaji, Kousuke ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COULOMB INTERACTIONS; FULL WIDTH AT HALF MAXIMUM; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE MEASUREMENT;

CAPACITANCE CONTROL; SINGLE CHARGE TRANSISTOR (SCT); SUBSTRATE DEPLETION;

TRANSISTORS;

EID: 34547664815     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2767765     Document Type: Article

References (20)

1. K. K. Likarev, Proc. IEEE 87, 606 (1999).
2. A. Fujiwara, Y. Takahashi, H. Namatsu, K. Kurihara, and K. Murase, Jpn. J. Appl. Phys., Part 1 37, 3257 (1998).
3. S. Horiguchi, A. Fujiwara, H. Inokawa, and Y. Takahashi, Jpn. J. Appl. Phys., Part 1 43, 2036 (2004).
4. K. Nishiguchi, O. Crauste, H. Namatsu, S. Horiguchi, Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa, Jpn. J. Appl. Phys., Part 1 44, 7717 (2005).
5. Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, and K. Murase, Appl. Phys. Lett. 76, 637 (2000).
6. T. Kitade, K. Ohkura, and A. Nakajima, Appl. Phys. Lett. 86, 123118 (2005).
7. D. H. Kim, S. K. Sung, J. S. Sim, K. R. Kim, J. D. Lee, B. G. Park, B. H. Choi, S. W. Hwang, and D. Ahn, Appl. Phys. Lett. 79, 3812 (2001).
8. Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase, Appl. Phys. Lett. 76, 3121 (2000).
9. N. Takahashi, H. Ishikuro, and T. Hiramoto, Appl. Phys. Lett. 76, 209 (2000).
10. M. Saitoh, H. Harata, and T. Hiramoto, Tech. Dig. - Int. Electron Devices Meet. 2004, 187.
11. K. Uchida, J. Koga, R. Ohba, and A. Toriumi, IEEE Trans. Electron Devices 50, 1623 (2003).
12. N. Y. Morgan, D. A. Magder, M. A. Kastner, Y. Takahashi, H. Tamura, and K. Murase, J. Appl. Phys. 89, 410 (2001).
13. Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase, and M. Tabe, Electron. Lett. 31, 136 (1995).
14. H. Ishikuro and T. Hiramoto, Appl. Phys. Lett. 71, 3691 (1997).
15. T. Ohtou, T. Nagumo, and T. Hiramoto, Jpn. J. Appl. Phys., Part 1 43, 3311 (2004).
16. M. Saitoh, T. Murakami, and T. Hiramoto, IEEE Trans. Nanotechnol. 1, 214 (2002).
17. M. Saitoh, T. Murakami, and T. Hiramoto, IEEE Trans. Nanotechnol. 2, 241 (2003).
18. M. Saitoh, H. Majima, and T. Hiramoto, Jpn. J. Appl. Phys., Part 1 42, 2426 (2003).
19. K. Miyaji, M. Saitoh, and T. Hiramoto, Appl. Phys. Lett. 88, 143505 (2006).
20. M. Saitoh, H. Harata, and T. Hiramoto, Jpn. J. Appl. Phys., Part 1 44, L338 (2005).