-
1
-
-
0142256482
-
"Single electron tunneling and suppression of shortchannel effects in submicron silicon transistors"
-
Nov
-
M. G. Peters, S. G. de Hartog, J. I. Dijkhuis, O. J. A. Buyk, and L. W. Molenkamp, "Single electron tunneling and suppression of shortchannel effects in submicron silicon transistors," J. Appl. Phys., vol. 84, no. 9, pp. 5052-5056, Nov. 1998.
-
(1998)
J. Appl. Phys.
, vol.84
, Issue.9
, pp. 5052-5056
-
-
Peters, M.G.1
de Hartog, S.G.2
Dijkhuis, J.I.3
Buyk, O.J.A.4
Molenkamp, L.W.5
-
2
-
-
33746894605
-
"Transport properties of ultra thin oxide gated Si SET near room temperature"
-
Jul
-
Y.-M. Wan, K.-D. Huang, C.-L. Sung, and S.-F. Hu, "Transport properties of ultra thin oxide gated Si SET near room temperature," in Proc. 5th IEEE Conf. Nanotechnol., Jul. 2005, pp. 750-753.
-
(2005)
Proc. 5th IEEE Conf. Nanotechnol.
, pp. 750-753
-
-
Wan, Y.-M.1
Huang, K.-D.2
Sung, C.-L.3
Hu, S.-F.4
-
3
-
-
0030214551
-
"Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates"
-
Aug
-
Y. Takahashi, H. Namatsu, K. Kurihara, K. Iwadate, M. Nagase, and K. Murase, "Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates," IEEE Trans. Electron Devices, vol. 43, no. 8, pp. 1213-1217, Aug. 1996.
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, Issue.8
, pp. 1213-1217
-
-
Takahashi, Y.1
Namatsu, H.2
Kurihara, K.3
Iwadate, K.4
Nagase, M.5
Murase, K.6
-
4
-
-
22244482198
-
"Silicon single-electron quantum-dot transistor switch operating at room temperature"
-
Mar
-
L. Zhuang, L. Guo, and S. Y. Chou, "Silicon single-electron quantum-dot transistor switch operating at room temperature," Appl. Phys. Lett., vol. 72, no. 10, pp. 1205-1207, Mar. 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, Issue.10
, pp. 1205-1207
-
-
Zhuang, L.1
Guo, L.2
Chou, S.Y.3
-
5
-
-
3042803437
-
"Silicon single electron transistors with SOI and MOSFET structures: The role of access resistances"
-
Dec
-
X. Jehl, M. Sanquer, G. Bertrand, G. Guégan, S. Deleonibus, and D. Fraboulet, "Silicon single electron transistors with SOI and MOSFET structures: The role of access resistances," IEEE Trans. Nanotechnol., vol. 2, no. 12, pp. 308-313, Dec. 2003.
-
(2003)
IEEE Trans. Nanotechnol.
, vol.2
, Issue.12
, pp. 308-313
-
-
Jehl, X.1
Sanquer, M.2
Bertrand, G.3
Guégan, G.4
Deleonibus, S.5
Fraboulet, D.6
-
6
-
-
2342607172
-
"Controlled single-electron effects in nonoverlapped ultra-short silicon field effect transistors"
-
Sep
-
F. Boeuf, X. Jehl, M. Sanquer, and T. Skotnicki, "Controlled single-electron effects in nonoverlapped ultra-short silicon field effect transistors," IEEE Trans. Nanotechnol., vol. 2, no. 9, pp. 144-148, Sep. 2003.
-
(2003)
IEEE Trans. Nanotechnol.
, vol.2
, Issue.9
, pp. 144-148
-
-
Boeuf, F.1
Jehl, X.2
Sanquer, M.3
Skotnicki, T.4
-
7
-
-
0001058596
-
"Coulomb blockade in low-mobility nanometer size Si MOSFETs"
-
Mar
-
M. Sanquer, M. Specht, L. Ghenim, S. Deleonibus, and G. Guegan, "Coulomb blockade in low-mobility nanometer size Si MOSFETs," Physi. Rev. B, vol. 61, no. 11, pp. 7249-7252, Mar. 2000.
-
(2000)
Physi. Rev. B
, vol.61
, Issue.11
, pp. 7249-7252
-
-
Sanquer, M.1
Specht, M.2
Ghenim, L.3
Deleonibus, S.4
Guegan, G.5
-
8
-
-
0002433791
-
"Coulomb blockade in the inversion layer of a Si metal-oxide-semiconductor field-effect transistor with a dual-gate structure"
-
Jan
-
H. Matsuoka, T. Ichiguchi, T. Yoshimura, and E. Takeda, "Coulomb blockade in the inversion layer of a Si metal-oxide-semiconductor field-effect transistor with a dual-gate structure," Appl. Phys. Lett., vol. 64, no. 5, pp. 586-588, Jan. 1994.
-
(1994)
Appl. Phys. Lett.
, vol.64
, Issue.5
, pp. 586-588
-
-
Matsuoka, H.1
Ichiguchi, T.2
Yoshimura, T.3
Takeda, E.4
-
9
-
-
3943072883
-
"High performance 45 nm CMOS technology with 20 nm multi-gate devices"
-
Sep
-
Z. Krivokapic, C. Tabery, W. Maszara, Q. Xiang, and M.-R. Lin, "High performance 45 nm CMOS technology with 20 nm multi-gate devices," in Proc. Int. Conf. Solid State Dev. Mater., Sep. 2003, pp. 760-760.
-
(2003)
Proc. Int. Conf. Solid State Dev. Mater.
, pp. 760
-
-
Krivokapic, Z.1
Tabery, C.2
Maszara, W.3
Xiang, Q.4
Lin, M.-R.5
-
10
-
-
0036053770
-
"35 nm CMOS FinFETs"
-
F.-L. Yang, H.-Y. Chen, F.-C. Chen, Y.-L. Chan, K.-N. Yang, C.-J. Chen, H.-J. Tao,Y.-K. Choi, M.-S. Liang, and C. Hu, "35 nm CMOS FinFETs," in Symp. on VLSI Tech. Dig., 2002, pp. 104-105.
-
(2002)
in Symp. on VLSI Tech. Dig.
, pp. 104-105
-
-
Yang, F.-L.1
Chen, H.-Y.2
Chen, F.-C.3
Chan, Y.-L.4
Yang, K.-N.5
Chen, C.-J.6
Tao, H.-J.7
Choi, Y.-K.8
Liang, M.-S.9
Hu, C.10
-
11
-
-
0038287007
-
"Conductance oscillations periodic in the density of a one-dimensional electron gas"
-
Jan
-
J. H. P. Scott-Thomas, S. B. Field, M. A. Kastner, H. I. Smith, and D. A. Antoniadis, "Conductance oscillations periodic in the density of a one-dimensional electron gas," Phys. Rev. Lett., vol. 62, no. 5, pp. 583-586, Jan. 1989.
-
(1989)
Phys. Rev. Lett.
, vol.62
, Issue.5
, pp. 583-586
-
-
Scott-Thomas, J.H.P.1
Field, S.B.2
Kastner, M.A.3
Smith, H.I.4
Antoniadis, D.A.5
-
12
-
-
3643059614
-
"Conductance oscillations of a Si single electron transistor at room temperature"
-
Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwdate, Y. Nakajima, S. Horiguchi, K. Murase, and M. Tabe, "Conductance oscillations of a Si single electron transistor at room temperature," in IEDM Tech. Dig., 1994, pp. 938-940.
-
(1994)
IEDM Tech. Dig.
, pp. 938-940
-
-
Takahashi, Y.1
Nagase, M.2
Namatsu, H.3
Kurihara, K.4
Iwdate, K.5
Nakajima, Y.6
Horiguchi, S.7
Murase, K.8
Tabe, M.9
-
13
-
-
0031145794
-
"50-nm channel nMOSFET/SIMOX with ultrathin 2- or 6-nm thick silicon layer and their significant features of operations"
-
May
-
Y. Omura, K. Kurihara, Y. Takahashi, T. Ishiyama, Y. Nakajima, and K. Izumi, "50-nm channel nMOSFET/SIMOX with ultrathin 2- or 6-nm thick silicon layer and their significant features of operations," IEEE Electron Device Lett., vol. 18, no. 5, pp. 190-196, May 1997.
-
(1997)
IEEE Electron Device Lett.
, vol.18
, Issue.5
, pp. 190-196
-
-
Omura, Y.1
Kurihara, K.2
Takahashi, Y.3
Ishiyama, T.4
Nakajima, Y.5
Izumi, K.6
-
14
-
-
3042765879
-
"Quantum-effect and single-electron devices"
-
Dec
-
S. M. Goodnick and J. Bird, "Quantum-effect and single-electron devices," IEEE Trans. Nanotechnol., vol. 2, no. 12, pp. 368-385, Dec. 2003.
-
(2003)
IEEE Trans. Nanotechnol.
, vol.2
, Issue.12
, pp. 368-385
-
-
Goodnick, S.M.1
Bird, J.2
-
15
-
-
21544477412
-
"Coulomb-blockade oscillations in disordered quantum wires"
-
Apr
-
A. A. M. Staring, H. van Houten, C. W. J. Beenakker, and C. T. Foxon, "Coulomb-blockade oscillations in disordered quantum wires," Phys. Rev. B, Condens. Matter, vol. 45, no. 16, pp. 9222-9236, Apr. 1992.
-
(1992)
Phys. Rev. B, Condens. Matter
, vol.45
, Issue.16
, pp. 9222-9236
-
-
Staring, A.A.M.1
van Houten, H.2
Beenakker, C.W.J.3
Foxon, C.T.4
-
17
-
-
0001159282
-
"Statistics of the coulomb-blockade peak spacings of a silicon quantum dot"
-
Apr
-
F. Simmel, D. Abusch-Magder, D. A. Wharam, M. A. Kastner, and J. P. Kotthaus, "Statistics of the coulomb-blockade peak spacings of a silicon quantum dot," Phys. Rev. B, Condens. Matter, vol. 59, no. 16, pp. 10 441-10 444, Apr. 1999.
-
(1999)
Phys. Rev. B, Condens. Matter
, vol.59
, Issue.16
, pp. 10441-10444
-
-
Simmel, F.1
Abusch-Magder, D.2
Wharam, D.A.3
Kastner, M.A.4
Kotthaus, J.P.5
-
18
-
-
0000804065
-
"Coulomb blockade peak spacing fluctuations in deformable quantum dots: A further test of random matrix theory"
-
Jul.
-
R. O. Vallejos, C. H. Lewenkopf, and E. R. Mucciolo, "Coulomb blockade peak spacing fluctuations in deformable quantum dots: A further test of random matrix theory," Phys. Rev. Lett., vol. 81, no. 3, pp. 677-680, Jul. 1998.
-
(1998)
Phys. Rev. Lett.
, vol.81
, Issue.3
, pp. 677-680
-
-
Vallejos, R.O.1
Lewenkopf, C.H.2
Mucciolo, E.R.3
-
19
-
-
4143093060
-
"Absence of bimodal peak spacing distribution in the coulomb blockade regime"
-
Sep
-
R. Berkovits, "Absence of bimodal peak spacing distribution in the coulomb blockade regime," Phys.Rev. Lett., vol. 81, no. 10, pp. 2128-2131, Sep. 1998.
-
(1998)
Phys.Rev. Lett.
, vol.81
, Issue.10
, pp. 2128-2131
-
-
Berkovits, R.1
-
20
-
-
0033116184
-
"Single-electron devices and their applications"
-
Apr
-
K. K. Likharev, "Single-electron devices and their applications," Proc. IEEE, vol. 87, no. 4, pp. 606-632, Apr. 1999.
-
(1999)
Proc. IEEE
, vol.87
, Issue.4
, pp. 606-632
-
-
Likharev, K.K.1
|