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Volumn 27, Issue 3, 2006, Pages 182-184

An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature

Author keywords

CMOS; Coulomb blockade oscillation; Multiple gate; Silicon on insulator (SOI); Single electron effect; Single electron transistor

Indexed keywords

CMOS INTEGRATED CIRCUITS; COULOMB BLOCKADE; ELECTRON DEVICES; GATES (TRANSISTOR); OSCILLATIONS; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE;

EID: 33644612598     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.870240     Document Type: Article
Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.