An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature

IEEE Electron Device Letters

Volumn 27, Issue 3, 2006, Pages 182-184

  Lee, Wei ^a   Su, Pin ^a   Chen, Hou Yu ^b   Chang, Chang Yun ^b   Su, Ke Wei ^b   Liu, Sally ^b   Yang, Fu Liang ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

CMOS; Coulomb blockade oscillation; Multiple gate; Silicon on insulator (SOI); Single electron effect; Single electron transistor

Indexed keywords

CMOS INTEGRATED CIRCUITS; COULOMB BLOCKADE; ELECTRON DEVICES; GATES (TRANSISTOR); OSCILLATIONS; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE;

COULOMB BLOCKADE OSCILLATION; GATE OXIDE; SHORT-CHANNEL EFFECTS; SINGLE-ELECTRON EFFECT; SINGLE-ELECTRON TRANSISTOR;

MOSFET DEVICES;

EID: 33644612598     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.870240     Document Type: Article

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