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Volumn , Issue , 2009, Pages
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A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET
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Author keywords
Couple Mode Space; Fully 3D real space Non Equillibrium Green Functions; Gate all around Si Nanowire
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Indexed keywords
APPROXIMATE METHODS;
COUPLED MODE;
DIFFERENT MODES;
ELECTRON CURRENTS;
FINITE NUMBER;
GATE-ALL-AROUND;
GREEN FUNCTION;
LONGITUDINAL DIRECTION;
MODE DECOMPOSITION;
MOS-FET;
NON-EQUILIBRIUM GREEN FUNCTIONS;
NON-UNIFORMITIES;
QUANTUM TRANSPORT EQUATIONS;
REAL-SPACE;
SELF-CONSISTENCY;
SI NANOWIRE;
SIMULATION RESULT;
SUB-BANDS;
TRANSPORT PHYSICS;
TRANSVERSAL DIRECTIONS;
APPROXIMATION THEORY;
DOPING (ADDITIVES);
ELECTROSTATIC DEVICES;
NANOWIRES;
QUANTUM CHEMISTRY;
QUANTUM ELECTRONICS;
SEMICONDUCTOR DEVICES;
SILICON;
SOLENOIDS;
SURFACE ROUGHNESS;
THREE DIMENSIONAL;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 74349089665
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/SISPAD.2009.5290218 Document Type: Conference Paper |
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Times cited : (14)
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References (4)
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