Electrostatically gated Si devices: Coulomb blockade and barrier capacitance

Applied Physics Letters

Volumn 89, Issue 5, 2006, Pages

  Zimmerman, Neil M ^a   Fujiwara, Akira ^b   Inokawa, Hiroshi ^b   Takahashi, Yasuo ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER CAPACITANCE; ENERGY BARRIER; NANOMETERS;

CAPACITANCE; CHARGE COUPLED DEVICES; COULOMB BLOCKADE; ENERGY GAP; GATES (TRANSISTOR); NANOTECHNOLOGY; PARAMETER ESTIMATION;

SEMICONDUCTOR DEVICES;

EID: 33748462725     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2240600     Document Type: Article

References (10)

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10. We note that the island length is approximately 70 nm and changes by about 4 nm (or twice that). The gate voltages in Figs. 3 and 4 inset are from the middle LG-C which has very little cross capacitance to the outer edges of the island; this is why the period of the oscillations does not change in Fig. 3 and 4 insets.