Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 526-529

  Bescond, M ^a,c   Cavassilas, N ^b   Kalna, K ^a   Nehari, K ^b   Raymond, L ^b   Autran, J L ^b   Lannoo, M ^b   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC TRANSPORT; CHANNEL ORIENTATION; QUANTUM MECHANICAL SIMULATIONS;

COMPUTER SIMULATION; CRYSTAL ORIENTATION; GERMANIUM; NANOWIRES; SEMICONDUCTING GALLIUM ARSENIDE; SILICON;

MOSFET DEVICES;

EID: 33847737345     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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