Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented

Nanotechnology

Volumn 18, Issue 25, 2007, Pages

  Bescond, Marc ^a   Cavassilas, Nicolas ^b   Lannoo, Michel ^b  

^a IMEP LAHC   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; GREEN'S FUNCTION; NANOWIRES; SCHRODINGER EQUATION; SEMICONDUCTOR MATERIALS;

CARTESIAN SYSTEMS; CHANNEL ORIENTATION; MASS EXPRESSIONS; SEMICONDUCTOR NANOWIRE MOSFETS;

MOSFET DEVICES;

METAL OXIDE; NANOWIRE;

ARTICLE; CALCULATION; MATHEMATICAL COMPUTING; METHODOLOGY; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 34347245893     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/25/255201     Document Type: Article

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