Mechanical computing redux: Relays for integrated circuit applications

Proceedings of the IEEE

Volumn 98, Issue 12, 2010, Pages 2076-2094

  Pott, Vincent ^a,b   Kam, Hei ^a,c   Nathanael, Rhesa ^a   Jeon, Jaeseok ^a   Alon, Elad ^a   King Liu, Tsu Jae ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INTEL CORPORATION   (United States)

Author keywords

Complementary metal oxide semiconductor (CMOS); computing; energy; low power computing; microelectromechanical systems (MEMS); nanoelectromechanical systems (NEMS); relays; scaling

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTATION THEORY; DIELECTRIC DEVICES; ELECTROMECHANICAL DEVICES; ENERGY EFFICIENCY; MEMS; METALLIC COMPOUNDS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTOR RELAYS; TIMING CIRCUITS; TRANSISTORS;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; COMPUTING; ENERGY; LOW-POWER COMPUTING; MICRO ELECTROMECHANICAL SYSTEM (MEMS); NANO ELECTROMECHANICAL SYSTEMS; RELAYS; SCALING;

COMPUTER CIRCUITS;

EID: 78649913007     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2010.2063411     Document Type: Conference Paper

References (70)

1. R. H. Dennard, F. H. Gaensslen, V. L. Rideout, E. Bassous, and A. R. LeBlanc, "Design of ion-implanted MOSFET's with very small physical dimensions," J. Solid-State Circuits, vol. SC-9, no. 5, pp. 256-268, Oct. 1974.
2. G. Baccarani, M. R. Wordeman, and R. H. Dennard, "Generalized scaling theory and its application to a 1/4 micrometer MOSFET design," IEEE Trans. Electron Devices, vol. 31, no. 4, pp. 452-462, Apr. 1984.
3. B. Davari, R. H. Dennard, and G. G. Shahidi, "CMOS scaling for high performance and low powerVThe next ten years," Proc. IEEE, vol. 83, no. 4, pp. 595-606, Apr. 1995.
4. G. E. Moore, "Progress in digital integrated electronics," in Proc. Int. Electron Devices Meeting, 1975, pp. 11-15.
5. E. J. Nowak, "Maintaining the benefits of CMOS scaling when scaling bogs down," IBM J. Res. Develop., vol. 46, pp. 169-186, 2002.
6. B. H. Calhoun and A. Chandrakasan, "Characterizing and modeling minimum energy operation for subthreshold circuits," in Proc. Int. Symp. Low-Power Electron. Design, 2004, pp. 90-95. (Pubitemid 40454691)
7. J. A. Stroscio and W. J. Kaiser, Scanning Tunneling Microscopy. New York: Academic, 1993.
8. W. M. Reddick and G. A. J. Amaratunga, "Silicon surface tunnel transistor," Appl. Phys. Lett., vol. 67, pp. 494-496, 1995.
9. K. Gopalakrishnan, P. B. Griffin, and J. D. Plummer, "I-MOS: A novel semiconductor device with a subthreshold slope lower than kT/q," in Proc. Int. Electron Devices Meeting, 2002, pp. 289-292.
10. S. White A brief history of computing. [Online]. Available: http://trillian. randomstuff.org.uk/~stephen/history/.
11. K. Akarvardar, D. Elata, R. Parsa, G. C. Wan, K. Yoo, J. Provine, P. Peumans, R. T. Howe, and H.-S. P. Wong, "Design considerations for complementary nanoelectromechanical logic gates," in Proc. Int. Electron Devices Meeting, 2007, pp. 299-302.
12. F. Chen, H. Kam, D. Markovic, T.-J. K. Liu, V. Stojanovic, and E. Alon, "Integrated circuit design with NEM relays," in Proc. Int. Conf. Comput.-Aided Design, 2008, pp. 750-757.
13. P. E. Ceruzzi A History of Modern Computing. Cambridge MA: MIT Press 1998.
14. D. Niarchos, "Magnetic MEMS: Key issues and some applications," Sens. Actuators A, vol. 109, pp. 166-173, 2003.
15. M. Ruan, J. Chen, and C. B. Wheeler, "Latching microelectromagnetic relays," Sens. Actuators A, vol. 91, pp. 346-350, 2001.
16. H. A. C. Tilmans, E. Fullin, H. Ziad, M. D. J. Van de Peer, J. Kesters, E. Van Geffen, J. Bergqvist, M. Pantus, E. Beyne, K. Baert, and F. Naso, "A fully-packaged electromagnetic microrelay," in Proc. Int. Conf. Microelectromech. Syst., 1999, pp. 25-30.
17. W. P. Taylor, O. Brand, and M. G. Allen, "Fully integrated magnetically actuated micromachined relays," J. Microelectromech. Syst., vol. 7, no. 2, pp. 181-191, Jun. 1998.
18. S. Zhou, X.-Q. Sun, and W. N. Carr, "A micro variable inductor chip using MEMS relays," in Proc. Int. Conf. Solid State Sens. Actuators, 1997, pp. 1137-1140.
19. E. J. J. Kruglick and K. S. J. Pister, "Lateral MEMS microcontact considerations," J. Microelectromech. Syst., vol. 8, pp. 264-271, Sep. 1999.
20. Y. Wang, Z. Li, D. T. McCormick, and N. C. Tien, "A micromachined RF microrelay with electrothermal actuation," Sens. Actuators A, vol. 103, pp. 231-236, 2003.
21. A. Raychowdhury, J. I. Kim, D. Peroulis, and K. Roy, "Integrated MEMS switches for leakage control of battery operated systems," in Proc. Custom Integr. Circuits Conf., 2006, pp. 457-460.
22. P. Muralt, "Recent progress in materials issues for piezoelectric MEMS," J. Amer. Ceramic Soc., vol. 91, pp. 1385-1396, 2008.
23. J. Baborowski, "Microfabrication of piezoelectric MEMS," J. Electroceramics, vol. 12, pp. 33-51, 2004.
24. O. Auciello, J. F. Scott, and R. Ramesh, "The physics of ferroelectric memories," Physics Today, vol. 51, pp. 22-27, 1998.
25. N. Sinha, R. Mahameed, C. Zuo, M. B. Pisani, C. R. Perez, and G. Piazza, "Dual beam actuation of piezoelectric AlN RF MEMS switches integrated with AlN contour-mode resonators," in Proc. Solid-State Sens. Actuators Microsyst. Workshop, 2008, pp. 22-25.
26. N. Sinha, T. S. Jones, Z. Guo, and G. Piazza, "Body-biased complementary logic implemented using AlN piezoelectric MEMS switches," in Proc. Int. Electron Devices Meeting, 2009, pp. 813-816.
27. R. Mahameed, N. Sinha, M. B. Pisani, and G. Piazza, "Dual-beam actuation of piezoelectric AlN RF MEMS switches monolithically integrated with AlN contour-mode resonators," J. Micromech. Microeng., vol. 18, pp. 1-11, 2008.
28. N. J. Conway, Z. J. Traina, and S.-G. Kim, "A strain amplifying piezoelectric MEMS actuator," J. Micromech. Microeng., vol. 17, pp. 781-787, 2007.
29. R. B. Karabalin, M. H. Matheny, X. L. Feng, E. Defäy, G. Le Rhun, C. Marcoux, S. Hentz, P. Andreucci, and M. L. Roukes, "Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films," Appl. Phys. Lett., vol. 95, 103111, 2009.
30. S. D. Senturia, Microsystem Design. New York: Springer-Verlag, 2001.
31. J. I. Seeger and B. E. Boser, "Dynamics and control of parallel-plate actuators beyond the electrostatic instability," in Proc. Transducers, 1999, pp. 474-477.
32. G. M. Rebeiz, RF MEMS: Theory Design and Technology. New York: Wiley 2003
33. H. Kam, "MOSFET replacement devices for energy-efficient digital integrated circuits Dept. Electr. Eng. Comput. Sci., Ph.D. dissertation, Univ. California Berkeley, Berkeley, CA, 2009.
34. W. W. Jang, J. O. Lee, J.-B. Yoon, M.-S. Kim, J.-M. Lee, S.-M. Kim, K.-H. Cho, D.-W. Kim, D. Park, and W.-S. Lee, BFabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap," Appl. Phys. Lett., vol. 92, 103110, 2008.
35. S. Chong, K. Akarvardar, R. Parsa, J.-B. Yoon, R. T. Howe, S. Mitra, and H.-S. P. Wong, "Nanoelectromechanical (NEM) relays integrated with CMOS SRAM for improved stability and low leakage," in Proc. Int. Conf. Comput.-Aided Design, 2009, pp. 478-484.
36. J.-O. Lee, M.-W. Kim, S.-D. Ko, H.-O. Kang, W.-H. Bae, M.-H. Kang, K.-N. Kim, D.-E. Yoo, and J.-B. Yoon, B3-terminal nanoelectromechanical switching device in insulating liquid media for low voltage operation and reliability improvement," in Proc. Int. Electron Devices Meeting, 2009, pp. 227-230.
37. H. Kam, V. Pott, R. Nathanael, J. Jeon, E. Alon, and T.-J. K. Liu, "Design and reliability of a micro-relay technology for zero-standby-power digital logic applications," in Proc. Int. Electron Devices Meeting, 2009, pp. 809-812.
38. D. A. Czaplewski, G. A. Patrizi, G. M. Kraus, J. R. Wendt, C. D. Nordquist, S. L. Wolfley, M. S. Baker, and M. P. de Boer, "A nanomechanical switch for integration with CMOS logic," J. Micromech. Microeng., vol. 19, 085003, 2009.
39. R. H. Baughman, A. A. Zakhidov, and W. A. de Heer, "Carbon nanotubes-the route toward applications," Science, vol. 297, pp. 787-792, 2002.
40. S. W. Lee, D. S. Lee, R. E. Morjan, S. H. Jhang, M. Sveningsson, O. A. Nerushev, Y. W. Park, E. E. B. Campbell. A three-terminal carbon nanorelay. Nano Lett. 4, 2027-2030. 2004
41. T. Rueckes, K. Kim, E. Joselevich, G. Y. Tseng, C.-L. Cheung, and C. M. Lieber, "Carbon nanotube-based nonvolatile random access memory for molecular computing," Science, vol. 289, pp. 94-97, 2000.
42. E. Dujardin, V. Derycke, M. F. Goffman, R. Lef̀evre, and J. P. Bourgoin, "Self-assembled switches based on electroactuated multiwalled nanotubes," Appl. Phys. Lett., vol. 87, 193107, 2005.
43. R. Nathanael, V. Pott, H. Kam, J. Jeon, and T.-J. K. Liu, B4-terminal relay technology for complementary logic,[ in Proc. Int. Electron Devices Meeting, 2009, pp. 223-226.
44. V. Milanovi, M. Maharbiz, A. Singh, B. Warneke, N. Zhou, H. K. Chan, and K. S. J. Pister, "Microrelays for batch transfer integration in RF systems," in Proc. Int. Conf. Microelectromech. Syst., 2000, pp. 787-792.
45. D. Hah, E. Yoon, and S. Hong, "A low-voltage actuated micromachined microwave switch using torsion springs and leverage," IEEE Trans. Microw. Theory Tech., vol. 48, no. 12, pp. 2540-2545, Dec. 2000.
46. J. Kim, S. Kwon, H. Jeong, Y. Hong, S. Lee, I. Song, and B. Ju, "A stiff and flat membrane operated DC contact type RF MEMS switch with low actuation voltage," Sens. Actuators A, vol. 153, pp. 114-119, 2009.
47. F. Plotz, S. Michaelis, R. Aigner, H.-J. Timme, J. Binder, and R. Noe, "A low-voltage torsional actuator for application in RF-microswitches, " Sens. Actuators A, vol. 92, pp. 312-317, 2001.
48. O. Degani, E. Socher, A. Lipson, T. Leitner, D. J. Setter, S. Kaldor, and Y. Nemirovsky, "Pull-in study of an electrostatic torsion microactuator," J. Microelectromech. Syst., vol. 7, pp. 373-379, Dec. 1998.
49. O. Degani and Y. Nemirovsky, "Design considerations of rectangular electrostatic torsion actuators based on new analytical pull-in expressions," J. Microelectromech. Syst., vol. 11, no. 1, pp. 20-26, Feb. 2002.
50. A. Hirata, K. Machida, H. Kyuragi, and M. Maeda, "A electrostatic micromechanical switch for logic operation in multichip modules on Si," Sens. Actuators A, vol. 80, pp. 119-125, 2000.
51. C.-Y. Tsai, W.-T. Kuo, C.-B. Lin, and T.-L. Chen, "Design and fabrication of MEMS logic gates," J. Micromech. Microeng., vol. 18, 045001, 2008.
52. J. Jeon, V. Pott, H. Kam, R. Nathanael, E. Alon, and T.-J. K. Liu, "Perfectly complementary relay design for digital logic applications," Electron Device Lett., vol. 31, pp. 371-373, 2010.
53. J. Jeon, V. Pott, H. Kam, R. Nathanael, E. Alon, and T.-J. K. Liu, "Seesaw relay logic and memory circuits," J. Microelectromech. Syst., vol. 19, no. 4, pp. 1012-1014, Aug. 2010.
54. A. Fruehling, K. Hagner, K. Roy, and D. Peroulis, "RF MEMS switches for leakage control in wireless handheld devices," in Proc. Antennas Propag. Int. Symp., 2007, pp. 97-100.
55. R. Holm, Electric Contacts: Theory and Application. Berlin Germany: Springer-Verlag, 1999
56. L. Kogut and K. Komvopoulos, "Electrical contact resistance theory for conductive rough surfaces," J. Appl. Phys., vol. 94, pp. 3153-3162, 2003.
57. Y. V. Sharvin, "A possible method for studying Fermi surfaces," Sov. Phys. JETP, vol. 21, p. 655, 1965.
58. V. Pott, H. Kam, J. Jeon, and T.-J. K. Liu, "Improvement in mechanical contact reliability with ALD TiO2 coating," in Proc. AVS Conf., 2009, pp. 208-209.
59. G. Binnig, H. Rohrer, C. Gerber, and E. Weibel, "Surface studies by scanning tunneling microscopy," Phys. Rev. Lett., vol. 49, pp. 57-61, 1982.
60. C. Goldsmith, J. Maciel, and J. McKillop, "Demonstrating reliability," Microw. Mag., pp. 56-60, 2007.
61. D. T. Lee, V. Pott, H. Kam, R. Nathanael, and T.-J. K. Liu, "AFM characterization of adhesion forces in micro-relays," in Proc. Microelectromech. Syst. Conf., Jan. 2010, pp. 232-235.
62. J. Tringe, W. Wilson, and J. Houston, "Conduction properties of microscopic gold contact surfaces," Proc. SPIEVInt. Soc. Opt. Eng., vol. 4558, pp. 151-158, 2001.
63. H. Lee, R. A. Coutu, S. Mall, and K. D. Leedy, "Characterization of metal and metal alloy films as contact materials in MEMS switches," J. Micromech. Microeng., vol. 16, pp. 557-563, 2006.
64. H. Dagdour, A. M. Cassell, and K. Banerjee, "Scaling and variability analysis of CNT-based NEMS devices and circuits with implications for process design," in Proc. Int. Electron Devices Meeting, 2008, pp. 529-532.
65. G. K. Fedder, R. T. Howe, T.-J. K. Liu, and E. Quevy, "Technologies for cofabricating MEMS and electronics," Proc. IEEE, vol. 96, no. 2, pp. 306-322, Feb. 2008.
66. H. Takeuchi, A. Wun, X. Sun, R. T. Howe, and T.-J. K. Liu, "Thermal budget limits of quarter-micrometer foundry CMOS for post-processing MEMS devices," IEEE Trans. Electron Devices, vol. 52, no. 9, pp. 2081-2086, Sep. 2005.
67. F. Chen, M. Spencer, R. Nathanael, C. Wang, H. Fariborzi, A. Gupta, H. Kam, V. Pott, J. Jeon, T.-J. K. Liu, D. Markovic, V. Stojanovic, and E. Alon, "Demonstration of integrated micro-electro-mechanical switch circuits for VLSI applications," in Proc. Int. Solid State Circuits Conf., 2010, pp. 26-28.
68. R. H. Dennard, F. H. Gaensslen, H. N. Yu V. L. Rideout, E. Bassous, and A. R. LeBlanc, Design of ion-implanted MOSFET's with very small physical dimensions," Proc. IEEE, vol. 87, 4, 668-678, Apr., 1999.
69. M. L. Roukes, "Nanoelectromechanical systems," in Proc. Solid-State Sens. Actuators Conf., 2000, pp. 367-376.
70. B. D. Jensen, K. Huang, L. L. W. Chow, and K. Kurabayashi, "Adhesion effects on contact opening dynamics in micromachined switches," J. Appl. Phys., vol. 97, 103535, 2005.