Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films

Applied Physics Letters

Volumn 95, Issue 10, 2009, Pages

  Karabalin, R B ^a   Matheny, M H ^a   Feng, X L ^a   Defa, E ^b   Le Rhun, G ^b   Marcoux, C ^b   Hentz, S ^b   Andreucci, P ^b   Roukes, M L ^a  

^a California Institute of Technology   (United States)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FILM PREPARATION; III-V SEMICONDUCTORS; NITRIDES; PIEZOELECTRICITY; RESONATORS;

ALUMINUM NITRIDE LAYER; ALUMINUM NITRIDE THIN FILMS; ELECTRICALLY TUNABLE; FLEXURAL MODES; HIGH FREQUENCY FUNDAMENTALS; NANOELECTROMECHANICAL RESONATOR; NANOMECHANICAL RESONATORS; PIEZOELECTRIC; PIEZOELECTRIC ACTUATION; VERY HIGH FREQUENCY;

ALUMINUM NITRIDE;

EID: 70249084135     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3216586     Document Type: Article

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