Characterization of epitaxial Pb(Zr,Ti)O3 thin films deposited by pulsed laser deposition on silicon cantilevers

Journal of Micromechanics and Microengineering

Volumn 20, Issue 8, 2010, Pages

  Nguyen, M D ^a   Nazeer, H ^a   Karakaya, K ^b   Pham, S V ^a   Steenwelle, R ^a   Dekkers, M ^a   Abelmann, L ^a   Blank, D H A ^a   Rijnders, G ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b HOLST CENTRE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; CANTILEVER DISPLACEMENT; CONDUCTIVE OXIDES; FINITE ELEMENT SIMULATIONS; INITIAL BENDING; LASER DOPPLER; MICRO ELECTRO MECHANICAL SYSTEM; OXIDE LAYER; PB(ZR , TI)O; PIEZOELECTRIC STACK; QUALITY FACTORS; RESONANCE FREQUENCIES; SILICON CANTILEVER; SILICON-ON-INSULATOR SUBSTRATES; TIP DISPLACEMENT; VIBROMETERS; WHITE-LIGHT INTERFEROMETER;

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; DEPOSITION; ELECTRODES; FINITE ELEMENT METHOD; LEAD; MATHEMATICAL MODELS; MEMS; MICROELECTROMECHANICAL DEVICES; NANOCANTILEVERS; NATURAL FREQUENCIES; PIEZOELECTRICITY; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; ZIRCONIUM;

PULSED LASERS;

EID: 77957784771     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/8/085022     Document Type: Article

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