Ferroelectric properties of sol-gel delivered epitaxial Pb (Zrx, Ti1-x) O3 thin films on Si using epitaxial γ- Al2 O3 Layers

Applied Physics Letters

Volumn 86, Issue 20, 2005, Pages 1-3

  Akai, Daisuke ^a   Yokawa, Mikako ^a   Hirabayashi, Keisuke ^a   Matsushita, Koji ^a   Sawada, Kazuaki ^a   Ishida, Makoto ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; MATHEMATICAL MODELS; PERMITTIVITY; POLARIZATION; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL FILMS; FERROELECTRIC FILMS; PHASE BOUNDARY; SIGNAL PROCESSING CIRCUITS;

THIN FILMS;

EID: 20844459488     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1929083     Document Type: Article

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