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Volumn 15, Issue 9, 2005, Pages 1607-1613

Selective silicon-on-insulator (SOI) implant: A new micromachining method without footing and residual stress

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; BANDWIDTH; DIELECTRIC MATERIALS; RESIDUAL STRESSES; SINGLE CRYSTALS; STABILITY;

EID: 23944466031     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/15/9/001     Document Type: Article
Times cited : (15)

References (13)
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    • Renard S 2000 Industrial MEMS on SOI J. Micromech. Microeng. 10 245-9
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  • 2
    • 0041787806 scopus 로고    scopus 로고
    • High aspect ratio micromachining (HARM) technologies for microinertial devices
    • McNie M, King D, Vizard C and Lee KW 2000 High aspect ratio micromachining (HARM) technologies for microinertial devices Microsyst. Technol. 6 184-8
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    • McNie, M.1    King, D.2    Vizard, C.3    Lee, K.W.4
  • 4
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    • Charging of pattern features during plasma etching
    • Arnold J and Sarwin H 1991 Charging of pattern features during plasma etching J. Appl. Phys. 70 5314-7
    • (1991) J. Appl. Phys. , vol.70 , Issue.10 , pp. 5314-5317
    • Arnold, J.1    Sarwin, H.2
  • 5
    • 0000830374 scopus 로고    scopus 로고
    • On the origin of the notching effect during etching in uniform high density plasmas
    • Hwang G and Giapis K 1997 On the origin of the notching effect during etching in uniform high density plasmas J. Vac. Sci. Technol. B 15 70-87
    • (1997) J. Vac. Sci. Technol. , vol.15 , Issue.1 , pp. 70-87
    • Hwang, G.1    Giapis, K.2
  • 6
    • 22644452378 scopus 로고    scopus 로고
    • Microfabrication and testing of suspended structures compatible with silicon-on-insulator technology
    • Ayón A, Ishihara K, Braff R, Sawin H and Schmidt M 1999 Microfabrication and testing of suspended structures compatible with silicon-on-insulator technology J. Vac. Sci. Technol. B 17 1589-93
    • (1999) J. Vac. Sci. Technol. , vol.17 , Issue.4 , pp. 1589-1593
    • Ayón, A.1    Ishihara, K.2    Braff, R.3    Sawin, H.4    Schmidt, M.5
  • 7
    • 17944401793 scopus 로고    scopus 로고
    • Trench oxide isolated single crystal silicon micromachined accelerometer
    • Sridhar U et al 1998 Trench oxide isolated single crystal silicon micromachined accelerometer 1998 Int. Electron Devices Meeting Tech. Dig. pp 475-8
    • (1998) 1998 Int. Electron Devices Meeting Tech. Dig. , pp. 475-478
    • Sridhar, U.1    Al, E.2
  • 8
    • 0033311568 scopus 로고    scopus 로고
    • Surface/bulk micromachining (SBM) process and deep trench oxide isolation method for MEMS
    • Lee S, Park S and Cho D 1999 Surface/bulk micromachining (SBM) process and deep trench oxide isolation method for MEMS 1999 Int. Electron Devices Meeting Tech. Dig. pp 701-4
    • (1999) 1999 Int. Electron Devices Meeting Tech. Dig. , pp. 701-704
    • Lee, S.1    Park, S.2    Cho, D.3
  • 9
    • 0036544176 scopus 로고    scopus 로고
    • Honeycomb-shaped deep-trench oxide posts combined with the SBM technology for micromachining single crystal silicon without using SOI
    • Lee S, Park S and Cho D 2002 Honeycomb-shaped deep-trench oxide posts combined with the SBM technology for micromachining single crystal silicon without using SOI Sensors Actuators A 97-98 734-8
    • (2002) Sensors Actuators , vol.97-98 , Issue.3 , pp. 734-738
    • Lee, S.1    Park, S.2    Cho, D.3
  • 10
    • 0032633034 scopus 로고    scopus 로고
    • A new micromachining technology using (111) silicon
    • Lee S, Park S and Cho D 1998 A new micromachining technology using (111) silicon Digest of Papers on Microprocess and Nanotechnology Conf. pp 174-5 Japan. J. Appl. Phys. 38 2699-703
    • (1998) Japan. J. Appl. Phys. , vol.38 , pp. 2699-2703
    • Lee, S.1    Park, S.2    Cho, D.3
  • 11
    • 0033352311 scopus 로고    scopus 로고
    • The surface/bulk micromachining (SBM) process: A new method for fabricating released microelectromechanical systems in single crystal silicon
    • Lee S, Park S and Cho D 1999 The surface/bulk micromachining (SBM) process: a new method for fabricating released microelectromechanical systems in single crystal silicon J. Microelectromech. Syst. 8 409-16
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  • 12
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    • Surface/bulk micromachined single-crystalline silicon micro-gyroscope
    • Lee S, Park S, Kim J, Yi S and Cho D 2000 Surface/bulk micromachined single-crystalline silicon micro-gyroscope J. Microelectromech. Syst. 9 557-67
    • (2000) J. Microelectromech. Syst. , vol.9 , pp. 557-567
    • Lee, S.1    Park, S.2    Kim, J.3    Yi, S.4    Cho, D.5
  • 13
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    • Sato T, Aoki N, Mizushima I and Tsunashima Y 1999 A new substrate engineering for the formation of empty space in silicon (ESS) induced by silicon surface migration 1999 Int. Electron Devices Meeting Tech. Dig. pp 517-20
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    • Sato, T.1    Aoki, N.2    Mizushima, I.3    Tsunashima, Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.