Electrooptic properties of epitaxial lead zirconate titanate films on silicon substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 10 B, 2007, Pages 6929-6932

  Kurihara, Kazuaki ^a   Kondo, Masao ^a   Sato, Keisuke ^a   Ishii, Masatoshi ^a   Wakiya, Naoki ^b   Shinozaki, Kazuo ^c  

^a FUJITSU LABORATORIES LTD   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electrooptic coefficient; Epitaxial film; Optical properties; Propagation loss; PZT; Silicon

Indexed keywords

BUFFER LAYERS; INFRARED RADIATION; REFRACTIVE INDEX; SILICON; ZIRCONIUM COMPOUNDS;

CHEMICAL SOLUTION METHOD; EPITAXIAL BUFFER LAYER; PRISM COUPLING METHOD; PROPAGATION LOSSES;

EPITAXIAL FILMS;

EID: 35348958501     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.6929     Document Type: Article

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