Proposal of new mixture target for PZT thin films by reactive sputtering

Vacuum

Volumn 51, Issue 4, 1998, Pages 665-671

  Hata, T ^a   Kawagoe, S ^a   Zhang, W ^a   Sasaki, K ^a   Yoshioka, Y ^b  

^a KANAZAWA UNIVERSITY   (Japan)

^b Matsushita Technoresearch Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC MATERIALS; FILM GROWTH; LEAD COMPOUNDS; PEROVSKITE; THIN FILMS;

LEAD ZIRCONATE TITANATE; QUASI-METALLIC MODE; REACTIVE SPUTTERING;

DIELECTRIC FILMS;

EID: 0032309491     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00270-x     Document Type: Article

References (7)

1. Hayashi, K., Shimizu, M. and Shiosaki, T., Jpn. J. Appl. Phys., 1993, 32, 4122.
2. Braun, W., Kwak, B. S., Erbil, A., Bidai, J. D. and Wilkins, B. J., Appl. Phys. Lett., 1993, 63, 467.
3. Dey, S. K. and Zuleeg, R., Ferroelectrics, 1990, 108, 37.
4. Kidoh, H., Ogawa, T., Morimoto, A. and Shimizu, T., Appl. Phys. Lett., 1991, 58, 2910.
5. Zhang, W., Sasaki, K. and Hata, T., Jpn. J. Appl. Phys., 1995, 34, 5120.
6. Zhang, W., Sasaki, K. and Hata, T., Jpn. J. Appl. Phys., 1996, 35, 1868.
7. Zhang, W., Sasaki, K. and Hata, T., Jpn. J. Appl. Phys., 1996, 35, 5084.