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Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

Ferroelectric properties of epitaxial Pb (Zr,Ti)O3 thin films on silicon by control of crystal orientation

(6) Dekkers, Matthijn a Nguyen, Minh D a Steenwelle, Ruud a Te Riele, Paul M a Blank, Dave H A a Rijnders, Guus a

a UNIVERSITY OF TWENTE (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CRYSTALLINE ORIENTATIONS; DEPOSITION CONDITIONS; FERROELECTRIC CHARACTERISTICS; FERROELECTRIC PROPERTY; FERROELECTRIC RESPONSE; GROWTH DIRECTIONS; HIGH QUALITY; HIGH RESPONSE; ORIENTED THIN FILMS; PB(ZR ,TI)O; PZT; PZT FILM; REMNANT POLARIZATIONS; SWITCHING CYCLES;

CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; FERROELECTRICITY; LEAD; LEAD ALLOYS; METALLIC COMPOUNDS; OXIDE FILMS; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; PULSED LASER DEPOSITION; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; THIN FILMS; YTTRIA STABILIZED ZIRCONIA; ZIRCONIA; ZIRCONIUM;

FERROELECTRIC FILMS;

EID: 67650446258 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3163057 Document Type: Article

Times cited : (97)

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