Atomic layer deposition of HfO 2 : Effect of structure development on growth rate, morphology and optical properties of thin films

Applied Surface Science

Volumn 257, Issue 3, 2010, Pages 1043-1052

  Rammula, Raul ^a   Aarik, Jaan ^a   Mändar, Hugo ^a   Ritslaid, Peeter ^a   Sammelselg, Väino ^a  

^a UNIVERSITY OF TARTU   (Estonia)

Author keywords

Atomic layer deposition (ALD); Crystallization; Hafnium dioxide; Structure; Topography

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; AMORPHOUS SILICON; ATOMIC LAYER DEPOSITION; ATOMS; CHLORINE COMPOUNDS; CRYSTAL ATOMIC STRUCTURE; CRYSTALLIZATION; FILM GROWTH; FILM THICKNESS; GROWTH RATE; HAFNIUM OXIDES; LIGHT SCATTERING; POLYCRYSTALLINE MATERIALS; REFRACTIVE INDEX; SILICA; STRUCTURE (COMPOSITION); SURFACE ROUGHNESS; THIN FILMS; TOPOGRAPHY;

DEPOSITION TEMPERATURES; EXPERIMENTAL UNCERTAINTY; EXTINCTION COEFFICIENTS; HAFNIUM DIOXIDE; OPTICAL PROPERTIES OF THIN FILMS; POLYCRYSTALLINE FILM; STRUCTURE DEVELOPMENT; TRANSMISSION SPECTRUMS;

OPTICAL FILMS;

EID: 77956613266     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.07.105     Document Type: Article

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