Synthesis of ZrO 2 thin films by atomic layer deposition: Growth kinetics, structural and electrical properties

Applied Surface Science

Volumn 193, Issue 1-4, 2002, Pages 120-128

  Cassir, Michel ^a   Goubin, Fabrice ^a   Bernay, Cécile ^a,b   Vernoux, Philippe ^a   Lincot, Daniel ^a  

^a CNRS   (France)

^b RENAULT   (France)

Author keywords

Atomic layer deposition; Thin film deposition; ZrO 2

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ELECTRIC PROPERTIES; HIGH TEMPERATURE EFFECTS; MORPHOLOGY; POROSITY; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GLASS; SEMICONDUCTING TIN COMPOUNDS; SPECTROSCOPIC ANALYSIS; SYNTHESIS (CHEMICAL); ULTRATHIN FILMS; WATER; X RAY DIFFRACTION ANALYSIS; ZIRCONIUM COMPOUNDS;

ATOMIC LAYER DEPOSITIONS (ALD); IMPEDANCE SPECTROSCOPY;

SURFACE STRUCTURE;

EID: 0037024046     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00247-7     Document Type: Article

References (32)