Physical and electrical characteristics of atomic-layer-deposited hafnium dioxide formed using hafnium tetrachloride and tetrakis(ethylmethylaminohafnium)

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

  Triyoso, Dina H ^a   Hegde, Rama I ^a   White, Bruce E ^a   Tobin, Philip J ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); METAL-ORGANIC PRECURSORS; METAL-OXIDE FILMS; VOLUME MANUFACTURING;

ELLIPSOMETRY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OXIDATION; PHYSICAL VAPOR DEPOSITION; SILICA; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

HAFNIUM COMPOUNDS;

EID: 21644476336     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1947389     Document Type: Article

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