Epitaxial growth in dislocation-free strained asymmetric alloy films

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 23, 2010, Pages

  Desai, Rashmi C ^a   Kim, Hokwon ^a   Chatterji, Apratim ^a,b   Ngai, Darryl ^a   Chen, Si ^a   Yang, Nan ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77956131608     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.235301     Document Type: Article

References (107)

1. R. J. Asaro and W. A. Tiller, Metall. Trans. 3, 1789 (1972). 10.1007/BF02642562
2. M. A. Grinfeld, Sov. Phys. Dokl. 31, 831 (1987).
3. D. J. Srolovitz, Acta Metall. 37, 621 (1989). 10.1016/0001-6160(89)90246- 0
4. B. J. Spencer, P. W. Voorhees, and S. H. Davis, J. Appl. Phys. 73, 4955 (1993) 10.1063/1.353815
5. B. J. Spencer, P. W. Voorhees, and S. H. Davis, Phys. Rev. Lett. 67, 3696 (1991). 10.1103/PhysRevLett.67.3696
6. H. Gao, J. Mech. Phys. Solids 42, 741 (1994) 10.1016/0022-5096(94)90041-8
7. H. Gao, Annu. Rev. Mater. Sci. 29, 173 (1999). 10.1146/annurev.matsci.29. 1.173
8. V. A. Shchukin and D. Bimberg, Rev. Mod. Phys. 71, 1125 (1999) 10.1103/RevModPhys.71.1125
9. B. Teichert, Phys. Rep. 365, 335 (2002) 10.1016/S0370-1573(02)00009-1
10. A. Stangl, V. Holy, and G. Bauer, Rev. Mod. Phys. 76, 725 (2004). 10.1103/RevModPhys.76.725
11. R. C. Desai and R. Kapral, Dynamics of Self-Organized and Self-Assembled Structures (Cambridge University Press, Cambridge, 2009), Chap. 10.1017/CBO9780511609725
12. J. W. Cahn, Acta Metall. 9, 795 (1961) 10.1016/0001-6160(61)90182-1
13. J. W. Cahn, Trans. Metall. Soc. AIME 242, 166 (1968)
14. J. W. Cahn, Acta Metall. 7, 18 (1959). 10.1016/0001-6160(59)90164-6
15. Y. Tu and J. Tersoff, Phys. Rev. Lett. 93, 216101 (2004) 10.1103/PhysRevLett.93.216101
16. Y. Tu and J. Tersoff, Phys. Rev. Lett. 98, 096103 (2007). 10.1103/PhysRevLett.98.096103
17. B. J. Spencer, P. W. Voorhees, and J. Tersoff, Phys. Rev. B 64, 235318 (2001). 10.1103/PhysRevB.64.235318
18. B. J. Spencer, P. W. Voorhees, and J. Tersoff, Appl. Phys. Lett. 76, 3022 (2000). 10.1063/1.126566
19. B. J. Spencer, P. W. Voorhees, and J. Tersoff, Phys. Rev. Lett. 84, 2449 (2000). 10.1103/PhysRevLett.84.2449
20. J. Tersoff, Phys. Rev. Lett. 85, 2843 (2000). 10.1103/PhysRevLett.85.2843
21. P. Venezuela and J. Tersoff, Phys. Rev. B 58, 10871 (1998). 10.1103/PhysRevB.58.10871
22. J. Tersoff, Phys. Rev. B 56, R4394 (1997). 10.1103/PhysRevB.56.R4394
23. J. E. Guyer and P. W. Voorhees, Phys. Rev. B 54, 11710 (1996). 10.1103/PhysRevB.54.11710
24. J. E. Guyer and P. W. Voorhees, in Evolution of Epitaxial Structure and Morphology, MRS Symposia Proceedings No. 399, edited by, A. Zangwill, and, D. Jesson D. Chambliss, and, R. Clarke, (Materials Research Society, Pittsburgh, 1996), p. 351.
25. J. E. Guyer and P. W. Voorhees, Phys. Rev. Lett. 74, 4031 (1995). 10.1103/PhysRevLett.74.4031
26. J. Tersoff and F. K. LeGoues, Phys. Rev. Lett. 72, 3570 (1994). 10.1103/PhysRevLett.72.3570
27. F. Léonard and R. C. Desai, Appl. Phys. Lett. 74, 40 (1999). 10.1063/1.123126
28. F. Léonard and R. C. Desai, Appl. Phys. Lett. 73, 208 (1998). 10.1063/1.121757
29. F. Léonard and R. C. Desai, Phys. Rev. B 57, 4805 (1998). 10.1103/PhysRevB.57.4805
30. F. Léonard and R. C. Desai, Phys. Rev. B 56, 4955 (1997). 10.1103/PhysRevB.56.4955
31. F. Léonard and R. C. Desai, Phys. Rev. B 55, 9990 (1997). 10.1103/PhysRevB.55.9990
32. Z. F. Huang and R. C. Desai, Phys. Rev. B 65, 205419 (2002). 10.1103/PhysRevB.65.205419
33. Z. F. Huang and R. C. Desai, Phys. Rev. B 65, 195421 (2002). 10.1103/PhysRevB.65.195421
34. P. Henoc, A. Izrael, M. Quillec, and H. Launois, Appl. Phys. Lett. 40, 963 (1982). 10.1063/1.92968
35. O. Ueda, S. Isozumi, and S. Komiya, Jpn. J. Appl. Phys., Part 2 23, L241 (1984). 10.1143/JJAP.23.L241
36. R. R. LaPierre, T. Okada, B. J. Robinson, D. A. Thompson, and G. C. Weatherly, J. Cryst. Growth 158, 6 (1996). 10.1016/0022-0248(95)00364-9
37. J. R. R. Bortoleto, H. R. Gutierrez, M. A. Cotta, and J. Bettini, J. Appl. Phys. 101, 064907 (2007). 10.1063/1.2712159
38. J. R. R. Bortoleto, H. R. Gutierrez, M. A. Cotta, and J. Bettini, Appl. Phys. Lett. 87, 013105 (2005). 10.1063/1.1953875
39. J. R. R. Bortoleto, H. R. Gutierrez, M. A. Cotta, J. Bettini, L. P. Cardoso, and M. M. G. de Carvalho, Appl. Phys. Lett. 82, 3523 (2003). 10.1063/1.1572553
40. C. D. Adams, M. Atzmon, Y.-T. Cheng, and D. J. Srolovitz, J. Mater. Res. 7, 653 (1992). 10.1557/JMR.1992.0653
41. G. C. Hua, N. Otsuka, D. C. Grillo, J. Han, L. He, and R. L. Gunshor, J. Cryst. Growth 138, 367 (1994). 10.1016/0022-0248(94)90835-4
42. S. R. Lee, D. D. Koleske, K. C. Cross, J. A. Floro, K. E. Waldrip, A. T. Wise, and S. Mahajan, Appl. Phys. Lett. 85, 6164 (2004) 10.1063/1.1840111
43. F. Y. Meng, M. Rao, N. Newman, and S. Mahajan, Acta Mater. 56, 5552 (2008). 10.1016/j.actamat.2008.07.032
44. S. M. de Sousa Pereira, K. P. O'Donnell, and E. Alves, Adv. Funct. Mater. 17, 37 (2007). 10.1002/adfm.200600650
45. Z. Liliental-Weber, D. N. Zakharov, K. M. Yu, J. W. Ager III, W. Walukiewicz, E. H. Haller, H. Lu, and W. J. Schaff, J. Electron Microsc. 54, 243 (2005). 10.1093/jmicro/dfi033
46. M. Rao, D. Kim, and S. Mahajan, Appl. Phys. Lett. 85, 1961 (2004) 10.1063/1.1791327
47. A. N. Westmeyer and S. Mahajan, Appl. Phys. Lett. 79, 2710 (2001). 10.1063/1.1411984
48. D. Doppalapudi, S. N. Basu, K. F. Ludwig, Jr., and T. D. Moustakas, J. Appl. Phys. 84, 1389 (1998). 10.1063/1.368251
49. J. E. Guyer, S. A. Barnett, and P. W. Voorhees, J. Cryst. Growth 217, 1 (2000). 10.1016/S0022-0248(00)00466-8
50. N. S. Chokshi and J. M. Millunchick, Appl. Phys. Lett. 76, 2382 (2000). 10.1063/1.126353
51. J. Mirecki Millunchick, R. D. Twesten, D. M. Follstaedt, S. R. Lee, E. D. Jones, Y. Zhang, S. P. Ahrenkiel, and A. Mascarenhas, Appl. Phys. Lett. 70, 1402 (1997) 10.1063/1.118589
52. S. P. Ahrenkiel, A. G. Norman, M. M. Al-Jassim, A. Mascarenhas, J. Mirecki Millunchick, R. D. Twesten, S. R. Lee, D. M. Follstaedt, and E. D. Jones, J. Appl. Phys. 84, 6088 (1998). 10.1063/1.368921
53. J.-M. Baribeau and X. Wu, Phys. Can. 63, 23 (2007).
54. A. Marzegalli, V. A. Zinovyev, F. Montalenti, A. Rastelli, M. Stoffel, T. Merdzhanova, O. G. Schmidt, and L. Miglio, Phys. Rev. Lett. 99, 235505 (2007). 10.1103/PhysRevLett.99.235505
55. L. Huang, F. Liu, G.-H. Lu, and X. G. Gong, Phys. Rev. Lett. 96, 016103 (2006). 10.1103/PhysRevLett.96.016103
56. E. Sutter, P. Sutter, and J. E. Bernard, Appl. Phys. Lett. 84, 2262 (2004). 10.1063/1.1669068
57. C. Schelling, G. Springholz, and F. Schaffler, Thin Solid Films 380, 20 (2000). 10.1016/S0040-6090(00)01462-0
58. P. Sutter and M. G. Lagally, Phys. Rev. Lett. 84, 4637 (2000); 10.1103/PhysRevLett.84.4637
59. R. M. Tromp, F. M. Ross, and M. C. Reuter, Phys. Rev. Lett. 84, 4641 (2000). 10.1103/PhysRevLett.84.4641
60. H. Lafontaine, B. F. Mason, S. J. Rolfe, D. D. Perović, and B. Bahierathan, J. Vac. Sci. Technol. B 16, 599 (1998). 10.1116/1.589869
61. D. D. Perović, B. Bahierathan, H. Lafontaine, D. C. Houghton, and D. W. McComb, Physica A 239, 11 (1997). 10.1016/S0378-4371(97)00019-8
62. T. Walther, C. J. Humphreys, and A. G. Cullis, Appl. Phys. Lett. 71, 809 (1997). 10.1063/1.119653
63. J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996). 10.1103/PhysRevLett.76.1675
64. Y. H. Xie, G. H. Gilmer, C. Roland, P. J. Silverman, S. K. Buratto, J. Y. Cheng, E. A. Fitzgerald, A. R. Kortan, S. Schuppler, M. A. Marcus, and P. H. Citrin, Phys. Rev. Lett. 73, 3006 (1994). 10.1103/PhysRevLett.73.3006
65. D. E. Jesson, S. J. Pennycook, J. Z. Tischler, J. D. Budai, J.-M. Baribeau, and D. C. Houghton, Phys. Rev. Lett. 70, 2293 (1993) 10.1103/PhysRevLett.70.2293
66. D. E. Jesson, S. J. Pennycook, J.-M. Baribeau, and D. C. Houghton, Phys. Rev. Lett. 71, 1744 (1993) 10.1103/PhysRevLett.71.1744
67. D. E. Jesson, S. J. Pennycook, J. Z. Tischler, J. D. Budai, J.-M. Baribeau, and D. C. Houghton, Phys. Rev. Lett. 71, 3737 (1993). 10.1103/PhysRevLett.71.3737
68. See, for example, S. Nakamura, MRS Bull. 23, 37 (1998).
69. Electronic archive New Semiconductor Materials. Characteristics and Properties, Ioffe Physico-Technical Institute, http://www.ioffe.rssi.ru/SVA/NSM/
70. O. Brandt, H. Yang, and K. H. Ploog, Phys. Rev. B 54, 4432 (1996). 10.1103/PhysRevB.54.4432
71. Using solid source MBE, M. A. Pinault and E. Tournie, Appl. Phys. Lett. 79, 3404 (2001) 10.1063/1.1418263
72. S. B. Zhang and S.-H. Wei, Phys. Rev. Lett. 86, 1789 (2001). 10.1103/PhysRevLett.86.1789
73. Y. Qiu, S. A. Nikishin, H. Temkin, V. A. Elyukhin, and Yu. A. Kudriatsev, Appl. Phys. Lett. 70, 2831 (1997). 10.1063/1.119016
74. H. Kim and T. G. Andersson, Appl. Phys. Lett. 80, 4768 (2002). 10.1063/1.1489476
75. W. M. McGee, R. S. Williams, M. J. Ashwin, T. S. Jones, E. Clarke, J. Zhang, and S. Tomić, Phys. Rev. B 76, 085309 (2007). 10.1103/PhysRevB.76. 085309
76. W. W. Mullins, J. Appl. Phys. 28, 333 (1957). 10.1063/1.1722742
77. M. Atzmon, D. A. Kessler, and D. J. Srolovitz, J. Appl. Phys. 72, 442 (1992). 10.1063/1.351872
78. Z.-F. Huang and R. C. Desai, Phys. Rev. B 67, 075416 (2003). 10.1103/PhysRevB.67.075416
79. Z.-F. Huang, D. Kandel, and R. C. Desai, Appl. Phys. Lett. 82, 4705 (2003). 10.1063/1.1588739
80. O. Caha, V. Holy, and K. E. Bassler, Phys. Rev. Lett. 96, 136102 (2006) 10.1103/PhysRevLett.96.136102
81. O. Caha, P. Mikulik, J. Novak, V. Holy, S. C. Moss, A. Norman, A. Mascarenhas, J. L. Reno, and B. Krause, Phys. Rev. B 72, 035313 (2005). 10.1103/PhysRevB.72.035313
82. Three of the four alloy systems considered have one of the components as the substrate: the growth of Si-Ge/Si at φ = 1, GaAsN/GaAs at φ = - 1 and InGaN/GaN at φ = - 1 would correspond to the limit of homoepitaxy. Ehrlich-Schwoebel barriers near step edges play important role in such systems, e.g., epitaxially growing Si film on a Si substrate; in our analysis, we have not included the nonequilibrium surface diffusion current that is associated with these barriers. See J. Krug, M. Plischke, and M. Siegert, Phys. Rev. Lett. 70, 3271 (1993) 10.1103/PhysRevLett.70.3271
83. J. Krug, Adv. Phys. 46, 139 (1997). 10.1080/00018739700101498
84. The natural structure for GaN is wurtzite. However, high quality, bulk, free-standing, zinc blende cubic GaN crystals have been grown by plasma-assisted MBE. See S. V. Novikov, N. M. Stanton, R. P. Campion, R. D. Morris, H. S. Green, C. T. Foxton, and A. J. Kent, Semicond. Sci. Technol. 23, 015018 (2008) 10.1088/0268-1242/23/1/015018
85. Such free- standing GaN crystals make ideal, nearly lattice matched substrates for the growth of InGaN films which are useful for UV optoelectronic devices and for high-power and high-frequency electronic applications. Also undoped thick cubic GaN fims have been grown on semi-insulating GaAs(001) substrates using plasma-assisted MBE by L. C. Jenkins, T. S. Cheng, C. T. Foxon, J. W. Orton, S. E. Hooper, S. V. Novikov, and V. V. Tret'yakov, J. Vac. Sci. Technol. B 13, 1585 (1995). 10.1116/1.587861
86. A. F. Wright, J. Appl. Phys. 82, 2833 (1997). 10.1063/1.366114
87. U. Rössler and D. Strauch, Semiconductors, Group IV Elements, IV-IV and III-V Compounds, Lattice Properties, edited by, W. Martienssen, Landolt-Börnstein, New Series, Group III, Vol. 41, Part α (Springer, Berlin, 2001).
88. J. E. Ayers, Heteroepitaxy of Semiconductors (CRC Press, Boca Raton, 2007), pp. 35-36. 10.1201/9781420006643
89. L. Vegard, Z. Phys. 5, 17 (1921; 10.1007/BF01349680
90. Significant departures from the linear interpolation of Vegard's law has been seen theoretically and experimentally; see for example, M. Reason, X. Weng, W. Ye, D. Dettling, S. Hanson, G. Obeidi, and R. S. Goldman, J. Appl. Phys. 97, 103523 (2005). 10.1063/1.1900289
91. F. C. Larché and J. W. Cahn, Acta Metall. 33, 331 (1985). 10.1016/0001-6160(85)90077-X
92. C. K. Gan, Y. P. Feng, and D. J. Srolovitz, Phys. Rev. B 73, 235214 (2006); see Fig.. 10.1103/PhysRevB.73.235214
93. S. Y. Karpov, N. I. Podolskaya, I. A. Zhmakin, and A. I. Zhmakin, Phys. Rev. B 70, 235203 (2004). 10.1103/PhysRevB.70.235203
94. K. Ishida, T. Nomura, H. Tokunaga, H. Ohtani, and T. Nishizawa, J. Less-Common Met. 155, 193 (1989) 10.1016/0022-5088(89)90228-2
95. H. Ho and G. B. Stringfellow, Appl. Phys. Lett. 69, 2701 (1996). 10.1063/1.117683
96. I. V. Rogozin and A. N. Georgobiani, Inorg. Mater. 42, 1342 (2006). 10.1134/S0020168506120107
97. In the GaAsN film, when viewed as a mixture of GaAs and GaN, it is the relative diffusion of As and N that is relevant which makes the motion of lighter N atoms important. On the other hand, in the InGaN ≡ (InN + GaN) and InGaP ≡ (InP + GaP) films, due to the relative diffusion of In and Ga, the motion of Ga becomes important; for this, see Ref. and M. H. Yang and C. P. Flynn, Phys. Rev. Lett. 62, 2476 (1989) 10.1103/PhysRevLett.62.2476
98. see also, S. A. Kukushkin, V. N. Bessolov, A. V. Osipov, and A. V. Luk'yanov, Phys. Solid State 43, 2229 (2001) 10.1134/1.1427946
99. S. A. Kukushkin, V. N. Bessolov, A. V. Osipov, and A. V. Luk'yanov, Phys. Solid State 44, 1399 (2002) 10.1134/1.1494642
100. and T. Okumura and Y. Akagi, J. Appl. Phys. 90, 5515 (2001) 10.1063/1.1415067
101. Note that due to uncertainties in D s, values deduced for τ o are uncertain. In turn, these introduce uncertainties in the critical thickness " c. In spite of this, we expect the overall trends to be as shown in Figs..
102. S. J. Chey and D. G. Cahill, Dynamics of Crystal Surfaces and Interfaces, edited by, Duxbury, and, Pence, (Plenum Press, New York, 1997), p. 59.
103. Z.-F. Huang and K. R. Elder, Phys. Rev. Lett. 101, 158701 (2008). 10.1103/PhysRevLett.101.158701
104. The surface reconstruction effects considered here mainly apply to the ultra-high vacuum growth like MBE, while for the growing processes under hydrogen environment, such as CVD, the dimer formation is prevented due to the passivation effect of hydrogen on the dangling bonds, and then the corresponding diffusion kinetics are different from that discussed in this paper. See, e.g., C. S. Ozkam, W. D. Nix, and H. Gao, in Structure and Evolution of Surfaces, MRS Symposia Proceedings No. 440, edited by, R. C. Cammarata, E. H. Chason, T. L. Einstein, and, E. D. Williams, (Materials Research Society, Pittsburgh, 1997), p. 323.
105. H. J. W. Zandvliet, B. Poelsema, and B. S. Swartzentruber, Phys. Today 54 (7), 40 (2001). 10.1063/1.1397393
106. X. R. Qin, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett. 85, 3660 (2000). 10.1103/PhysRevLett.85.3660
107. R. C. Desai and S. Chen (unpublished).