Implications of a model for instability during film growth for strained InGaAs and SiGe layers

Applied Physics Letters

Volumn 74, Issue 1, 1999, Pages 40-42

  Léonard, François ^a   Desai, Rashmi C ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001942516     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123126     Document Type: Article

References (19)

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