Compositional modulation in InxGa1-xN: TEM and X-ray studies

Journal of Electron Microscopy

Volumn 54, Issue 3, 2005, Pages 243-250

  Liliental Weber, Zuzanna ^a   Zakharov, Dmitri N ^a   Yu, Kin M ^a   Ager III, Joel W ^a   Walukiewicz, Wladyslaw ^a   Haller, Eugene E ^a,b   Lu, Hai ^c   Schaff, William J ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Cornell University   (United States)

Author keywords

Compositional modulation; Electron diffraction; InGaN; Modulation period; TEM; X ray; Z contrast

Indexed keywords

BUFFER LAYERS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTOR ALLOYS; SURFACE SEGREGATION; X RAY DIFFRACTION;

ALN BUFFER LAYERS; COMPOSITIONAL MODULATION; GAN BUFFER LAYERS; MISCIBILITY GAP; MODULATION PERIOD; MOLECULAR-BEAM EPITAXY; N LAYERS; X- RAY DIFFRACTIONS; X-RAY STUDIES; Z CONTRASTS;

III-V SEMICONDUCTORS;

EID: 27744544660     PISSN: 00220744     EISSN: 14779986     Source Type: Journal    
DOI: 10.1093/jmicro/dfi033     Document Type: Article

References (29)

1. Nakamura S, Mukai T, and Senoh M (1994) Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Appl. Phys. Lett. 64: 1687-1689.
2. Akasaki I, Sota S, Sakai H, Tanaka T, Koike M, and Amano H (1996) Shortest wavelength semiconductor laser diode. Electron. Latt. 32: 1105-1106.
3. Tansley T A and Foley C P (1986) Optical band gap of indium nitride. J. Appl. Phys. 59: 3241-3244.
4. Wu J, Walukiewicz W, Yu K M, Ager J W III, Haller E E, Lu H, Schaff W J, Saito Y, and Nanishi Y (2002) Unusual properties of the fundamental band gap of InN. Appl. Phys. Lett. 80: 3967-3969.
5. xN (0 < x < 0.2) on GaN by photoreflection spectroscopy. Appl. Phys. Lett. 73: 1994-1996.
6. Bhuiyan A G, Hashimoto A, and Yamamoto A (2003) Indium nitride (InN): a review on growth, characterization, and properties. J. Appl. Phys. 94: 2779-2808.
7. Shubina T V, Ivanov S V, Jmerik V N, Solnyshkov D D, Vekshin V A, Kop'ev P S, Vasson A, Lemarie J, Kavokin A, Amano H, Shimono K, Kasic A, and Monemar B (2004) Mie resonances, infrared emission, and the band gap of InN. Phys. Rev. Lett. 92: 117407/1-4.
8. Ho H and Stringfellow G B (1996) Solid phase immiscibility in GaInN. Appl. Phys. Lett. 69: 2701-2703.
9. Zunger A and Mahajan S (1994) In: Handbook on Semiconductors, Vol. 3, ed. Mahajan S. (North Holland, Amsterdam).
10. Wakahara A, Tokuda T, Dang X, Noda S, and Sasaki A (1997) Compositional inhomogeneity and immiscibility of a GaInN ternary alloy. Appl. Phys. Lett. 71: 906-908.
11. El-Masry N A, Piner E L, Liu S X, and Bedair SM (1998) Phase separation in InGaN grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 72: 40-42.
12. Singh R, Doppalapudi D, Moustakas T D, and Romano L T (1997) Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition. Appl. Phys. Lett. 70: 1089-1091.
13. Doppalapudi D, Basu S N, Ludwig K F Jr, and Moustakas T D (1998) Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy. J. Appl. Phys. 84: 1389-1395.
14. Westmeyer A N and Mahajan S (2001) Periodic composition modulations in InGaN epitaxial layers. Appl. Phys. Lett. 79: 2710-2712.
15. Ueda O, Isozumi S, and Komiya S (1984) Composition-modulated structures in InGaAsP and InGaP liquid phase epitaxial layers grown on (001) GaAs substrates. Jap. J. Appl. Phys. 23: L241-L243.
16. 1-y layers lattice matched to InP substrates. Appl. Phys. Lett. 40: 963-965.
17. xAs grown by hydride transport vapor-phase epitaxy. J. Appl. Phys. 57: 4610-4615.
18. Mahajan S, Dutt B V, Temkin H, Cava R J, and Bonner W A (1984) Spinodal decomposition in InGaAsP epitaxial layers. J. Cryst. Growth 68: 589-595.
19. de Cremoux B, Hirth P and Ricciardi J (1981) On the presence of a solid immiscibility domain in the GaInAsP phase diagram. Inst. Phys. Conf. Ser. 56: 115-124.
20. Stringfellow G B (1982) Miscibility gaps in quaternary III/V alloys. J. Cryst. Growth 58: 194-202.
21. 1-yAs vertical superlattices. Appl. Phys. Lett. 68: 3443-3445.
22. 1-y/ZnSe buffer layer/GaAs heterostructures. Appl. Phys. Lett. 65: 1230-1232.
23. Dorin C, Mirecki-Millunhick J, and Wauchope C (2002) Lateral composition modulation in mixed anion multilayers. Appl. Phys. Lett. 81: 3368-3370.
24. Lu H, Schaff W J, Hwang J, Wu H, Yeo W, Pharkya A, and Eastman L F (2000) Improvement on epitaxial grown of InN by migration enhanced epitaxy. Appl. Phys. Lett. 77: 2548-2550.
25. Williams D B and Carter C B (1996) In: Transmission Electron Microscopy, Vol. 4 (Plenum Press, New York and London).
26. Ahn C C, Krivanek O L, Burgner R P, Disco M M, and Swann P R (1983) EELS Atlas (Gatan, In.).
27. Liliental-Weber Z, Chen Y, Ruvimov S, and Washburn J (1997) Formation mechanism of nanotubes in GaN. Phys. Rev. Lett. 79: 2835-2838.
28. Northrup J and Neugebauer (1999) Indium-induced changes in GaN(0001) surface morphology. J Phys. Rev. B 60: R8473-R8476.
29. Liliental-Weber Z, Tomaszewicz T, Zakharov D, Jasinski J, and O'Keefe M A (2004) Atomic structure of defects in GaN:Mg grown with Ga polarity. Phys. Rev. Lett. 93: 206102/1-4.