Morphological evolution of In0.26Ga0.74As grown under compression on GaAs(001) and under tension on InP(001)

Journal of Crystal Growth

Volumn 217, Issue 1, 2000, Pages 1-12

  Guyer, J E ^a   Barnett, S A ^a   Voorhees, P W ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; COMPRESSIVE STRENGTH; DEPOSITION; INDIUM ALLOYS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; TENSILE STRENGTH;

COMPOSITIONAL UNIFORMITY; MORPHOLOGICAL EVOLUTION; MORPHOLOGICAL STABILITY;

SEMICONDUCTOR GROWTH;

EID: 0034229859     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00466-8     Document Type: Article

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