In situ measurements of the critical thickness for strain relaxation in AlGaN/GaN heterostructures

Applied Physics Letters

Volumn 85, Issue 25, 2004, Pages 6164-6166

  Lee, S R ^a   Koleske, D D ^a   Cross, K C ^a   Floro, J A ^a   Waldrip, K E ^a   Wise, A T ^b   Mahajan, S ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASER DEFLECTOMETRY; MISFIT DISLOCATION; STRAIN RELAXATION; SURFACE FRACTURE;

ATOMIC FORCE MICROSCOPY; BRITTLE FRACTURE; CALIBRATION; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASTIC DEFORMATION; RELAXATION PROCESSES; SAPPHIRE; SIGNAL TO NOISE RATIO; STRAIN; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

ALUMINUM ALLOYS;

EID: 20444456690     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1840111     Document Type: Article

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