Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy

Applied Physics Letters

Volumn 71, Issue 6, 1997, Pages 809-811

  Walther, T ^a   Humphreys, C J ^a   Cullis, A G ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL GROWTH; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LOSS SPECTROSCOPY; GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

LATERAL SEGREGATION; MISFIT DISLOCATION; SCANNING TRANSMISSION ELECTRON MICROSCOPE; STRANSKI-KRASTANOV GROWTH; VERTICAL SEGREGATION;

SEGREGATION (METALLOGRAPHY);

EID: 0031208389     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119653     Document Type: Article

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