Kinetic critical thickness for surface wave instability vs. misfit dislocation formation in GexSi1-x/Si (100) heterostructures

Physica A: Statistical Mechanics and its Applications

Volumn 239, Issue 1-3, 1997, Pages 11-17

  Perovic D D ^a   Bahierathan, B ^a   Lafontaine, H ^b   Houghton, D C ^b   McComb, D W ^c,d  

^a UNIVERSITY OF TORONTO   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c MCMASTER UNIVERSITY   (Canada)

^d UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROSTRUCTURES; MISFIT DISLOCATIONS;

DISLOCATIONS (CRYSTALS); NUCLEATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SURFACE WAVES;

MULTILAYERS;

EID: 0031146410     PISSN: 03784371     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0378-4371(97)00019-8     Document Type: Article

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