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Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 20-24

Kinetic vs. strain-induced growth instabilities on vicinal Si(001) substrates

(3) Schelling, C a Springholz, G a Schaffler F a

a JOHANNES KEPLER UNIVERSITY LINZ (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; MORPHOLOGY; REACTION KINETICS; RELAXATION PROCESSES; SEMICONDUCTING SILICON; STRAIN RATE; SUBSTRATES; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY;

STRAIN-INDUCED EQUILIBRIUM EFFECTS; STRAIN-INDUCED GROWTH INSTABILITIES;

SEMICONDUCTING FILMS;

EID: 0034499867 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(00)01462-0 Document Type: Article

Times cited : (13)

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