Kinetics of GaN radical-beam gettering epitaxy on GaAs substrates

Inorganic Materials

Volumn 42, Issue 12, 2006, Pages 1342-1347

  Rogozin, I V ^a   Georgobiani, A N ^b  

^a BERDYANSK STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33845305048     PISSN: 00201685     EISSN: 16083172     Source Type: Journal    
DOI: 10.1134/S0020168506120107     Document Type: Article

References (19)

1. Pearton, S.J., Zolper, J.C., Shul, R.J., and Ren, F., GaN: Processing, Defects, and Devices, J. Appl. Phys., 1999, vol. 86, no. 1, pp. 1-78.
2. Ambacher, O., Growth and Application of Group III-Nitrides, J. Phys. D: Appl. Phys., 1998, vol. 31, no. 20, pp. 2653-2710.
3. Asif Khan, M., Shatalov, M., Maruska, H.P., et al., IIINitride UV Devices, Jpn. J. Appl. Phys., 2005, vol. 44, no. 10, pp. 7191-7206.
4. Boćkowski, M., High Pressure Direct Synthesis of III-V Nitrides, Phys. B (Amsterdam, Neth.), 1999, vol. 265, pp. 1-5.
5. Kikuchi, A., Hoshi, H., and Kishino, K., Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source, Jpn. J. Appl. Phys., Part 2, 1994, vol. 33, no. 1, pp. 688-693.
6. Ito, T., Sumiya, M., Takano, Y., et al., Influence of Thermal Annealing on GaN Buffer Layers and the Property of Subsequent GaN Layers Grown by Metalorganic Chemical Vapor Deposition, Jpn. J. Appl. Phys., Part 1, 1999, vol. 38, no. 2, pp. 649-653.
7. Li, Z., Chen, H., Liu, H., et al., Influence of AlN Buffer on Phase Structure of GaN on GaAs (001) Grown by Radio-Frequency Molecular Beam Epitaxy, Jpn. J. Appl. Phys., 2000, vol. 39, no. 8, pp. 4704-4706.
8. Strite, S., Ruan, J., Li, Z., et al., An Investigation of the Properties of Cubic GaN Grown on GaAs by Plasma-Assisted Molecular-Beam Epitaxy, J. Vac. Sci. Technol., B, 1992, vol. 10, no. 4, pp. 1924-1929.
9. Sugiyma, H., Shinohara, M., and Wada, K., A Study of the Nitridation Process on GaAs (001) Surface by rf-N Plasma Irradiation, Appl. Surf. Sci., 1997, vols. 117-118, pp. 546-550.
10. Xue, Q.-K., Xue, Q.-Zh., Hasegawa, Y., et al., Initial Stages of Cubic GaN Growth on GaAs (001) Surface Studied by Scanning Tunneling Microscopy, Jpn. J. Appl. Phys., Part 2, 1997, vol. 36, no. 11, pp. L1486-L1489.
11. Bakhtizin, R.Z., Xue, Q.-Zh, Xue, Q.-K, et al., Group III Nitride Heteroepitaxy Studied by Scanning Tunneling Microscopy, Usp. Fiz. Nauk, 2002, vol. 174, no. 4, pp. 383-405.
12. Georgobiani, A.N., Kotlyarevsky, M.B., and Rogozin, I.V., Methods of High-Energy Chemistry in the Technology of Wide-Gap Chalcogenide Semiconductors, Inorg. Mater., 2004, vol. 40, suppl. 1, pp. S1-S18.
13. Neugebauer, J., Zywietz, T., Scheffler, M., and Northrup, J., Theory of Surfaces and Interfaces of Group III-Nitrides, Appl. Surf. Sci., 2000, vols. 159-160, pp. 353-359.
14. Koleske, P.P., Wickenden, A.E., Henry, R.L., et al., Growth Model for GaN with Comparison to Structural, Optical, and Electrical Properties, J. Appl. Phys., 1998, vol. 84, no. 4, pp. 1998-2010.
15. Butkhuzi, T.V, Georgobiani, A.N., Zada-Uly, E., et al., Luminescence of n- and p-Type Single-Crystal Zinc Oxide Layers, Tr. Fiz. Inst. im. P. N. Lebedeva, Akad. Nauk SSSR, 1987, vol. 182, pp. 140-187.
16. Hill, P., Westwood, D.I., Haworth, L., et al., Nitridation of the GaAs (001) Surface Using Atomic Nitrogen, J. Vac. Sci. Technol., B, 1997, vol. 15, no. 4, pp. 1133-1138.
17. Moulder, J.F., Stickle, W.F., Sobol, P.E., and Bomben, K.D., Handbook of X-ray Photoelectron Spectroscope, Eden Prairie: Perkin-Elmer, 1992.
18. Tracy, K.M., Mecouch, W.J., Davis, R.F., and Nemanich, R.J., Preparation and Characterization of Atomically Clean, Stoichiometric Surfaces of n- and p-Type GaN(0001), J. Appl. Phys., 2003, vol. 94, no. 5, pp. 3163-3172.
19. Zhu, X.-Y., Wolf, M., Huett, T., and White, J.M., Laser-Induced Interaction of Ammonia with GaAs(100): I. Dissociation and Nitridation, J. Chem. Phys., 1992, vol. 97, no. 8, pp. 5856-5867.