VFB Roll-off in HfO2 Gate Stack after High Temperature Annealing Process - A Crucial Role of Out-diffused Oxygen from HfO2 to Si

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 72-73

  Akiyama, K ^a   Wang, W ^b   Mizubayashi, W ^b   Ikeda, M ^a   Ota, H ^b   Nabatame, T ^a   Toriumi, A ^b,c  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

VLSI TECHNOLOGIES;

FLOATING BREAKWATERS;

EID: 40949138773     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339732     Document Type: Conference Paper

References (6)

1. B. Hun Lee et al., materials today 9, p.32 (2006).
2. K. Akiyama et al., Ext. Abst. IWDTF2006, p.63 (2006).
3. H. -S. Jung et al., Proc. of IRPS, p.50 (2005).
4. M. Takahashi et al., Ext. Abst. SSDM2006, p.224 (2006).
5. T. Nabatame et. al., IEDM Tech. Dig., p.43 (2004).
6. Y. Akasaka et al., VLSI Tech. Dig., p.206 (2006).