Physical comparison of HfO 2 transistors with polycrystalline silicon and TiN electrodes

Applied Physics Letters

Volumn 87, Issue 8, 2005, Pages

  Lysaght, P S ^a   Foran, B ^b   Bersuker, G ^a   Peterson, J J ^a   Young, C D ^a   Majhi, P ^a   Lee, B H ^c   Huff, H R ^a  

^a SEMATECH   (United States)

^b Advanced Technology Development Facility   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL ELECTRON MICROSCOPY; ELECTRON TRAPPING; OXIDE THICKNESS; TIN ELECTRODES;

CHEMICAL ANALYSIS; DIELECTRIC FILMS; ELECTRODES; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON TRAPS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); POLYSILICON; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

GATES (TRANSISTOR);

EID: 24344435964     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2011827     Document Type: Article

References (13)

1. W. L. Scopel, A. J. R. da Silva, W. Orellana, and A. Fazzio, Appl. Phys. Lett. 84, 1492 (2004).
2. M. Copel, M. C. Reuter, and P. Jamison, Appl. Phys. Lett. 83, 458 (2003).
3. A. C. Diebold, B. Foran, C. Kisielowski, D. A. Muller, S. J. Pennycook, E. Principe, and S. Stemmer, Microsc. Microanal. 9, 493 (2003).
4. S. Stemmer, Z. Chen, C. G. Levi, P. Lysaght, B. Foran, J. A. Gisby, and J. R. Taylor, Jpn. J. Appl. Phys., Part 1 42, 3593 (2003).
5. G. Wilk and D. Muller, Appl. Phys. Lett. 83, 3984 (2003).
6. J.-C. Lee, S.-J. Oh, M. Cho, C. S. Hwang, and R. Jung, Appl. Phys. Lett. 84, 1305 (2004).
7. S. Ramanathan, D. A. Muller, G. D. Wilk, C. M. Park, and P. C. McIntyre, Appl. Phys. Lett. 79, 3311 (2001).
8. G. Bersuker, J. Barnett, N. Moumen, B. Foran, C. D. Young, P. Lysaght, J. Peterson, B. H. Lee, P. M. Zeitzoff, and H. R. Huff, Jpn. J. Appl. Phys., Part 1 43, 7899 (2004).
9. P. S. Lysaght, J. J. Peterson, B. Foran, C. D. Young, G. Bersuker, and H. R. Huff, Mater. Sci. Semicond. Process. 7, 259 (2004).
10. S. Stemmer, Y. Li, B. Foran, P. S. Lysaght, S. K. Stieiffer, P. Fuoss, and S. Seifert, Appl. Phys. Lett. 83, 3141 (2003).
11. G. Bersuker, J. Peterson, J. Barnett, A. Korkin, J. H. Sim, R. Choi, B. H. Lee, J. Greer, P. Lysaght, and H. R. Huff, J. Electrochem. Soc. 2005-05, 141 (2005).
12. F. Giustino, P. Umari, and A. Pasquarello, Microelectron. Eng. 72, 299 (2004).
13. C. D. Young, G. Bersuker, G. A. Brown, P. Lysaght, C. Lim, P. Zeitzoff, R. W. Murto, and H. R. Huff, IEEE IIRW (2003).