High performance transistors featured in an aggressively scaled 45nm bulk CMOS technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 16-17

  Luo, Z ^a   Rovedo, N ^a   Ong, S ^b   Phoong, B ^b   Eller, M ^c   Utomo, H ^a   Ryou, C ^d   Wang, H ^a   Stierstorfer, R ^c   Clevenger, L ^a   Kim, S ^a,c   Toomey, J ^a   Sciacca, D ^a   Li, J ^a   Wille, W ^a   Zhao, L ^b   Teo, L ^b   Dyer, T ^a   Fang, S ^a   Yan, J ^c   Kwon, O ^a,c   Park, D ^a   Holt, J ^a   Han, J ^c   Chan, V ^a   Yuan, J ^a   Kebede, T ^a   Lee, H ^a   Lee, S ^d   Vayshenker, A ^a   Yang, Z ^a   Tian, C ^a   Ng, H ^a   Shang, H ^a   Hierlemann, M ^c   Ku, J ^d   Sudijono, J ^b   Ieong, M ^a   more..

^a IBM RESEARCH   (United States)

^b Chartered Semiconductor Manufacturing ^*

^c INFINEON TECHNOLOGIES AG   (Germany)

^d SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BULK CMOS; CMOS TRANSISTORS; DIGITAL HOMES; DRIVE CURRENTS; I/O OPERATIONS; LOW LEAKAGE; OFF CURRENT (IOFF); OXIDE THICKNESSES; ULTRA LOW K (ULK); VLSI TECHNOLOGIES; WIRING DELAY;

DIELECTRIC MATERIALS; DIGITAL DEVICES; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; TRANSISTORS;

TECHNOLOGY;

EID: 47249087275     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339709     Document Type: Conference Paper

References (6)

1. S. Ito et al., IEDM, pp. 247, 2000;
2. H. S. Yang, IEDM, pp. 1075,2004;
3. T. Ghani et al., IEDM, pp. 978, 2003;
4. H. Nii et al., IEDM, pp. 685, 2006;
5. E. Josse et al., IEDM, pp. 693, 2006;
6. M. Shima et al., Symp. VLSI Tech, pp. 196, 2006