-
1
-
-
0036026358
-
Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma
-
DOI 10.1116/1.1502699
-
D. Shamiryan, M. R. Baklanov, S. Vanhaelemeersch, and K. Maex, J. Vac. Sci. Technol. B JVTBD9 1071-1023 20, 1923 (2002). 10.1116/1.1502699 (Pubitemid 35354098)
-
(2002)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.20
, Issue.5
, pp. 1923-1928
-
-
Shamiryan, D.1
Baklanov, M.R.2
Vanhaelemeersch, S.3
Maex, K.4
-
2
-
-
10844287997
-
Etching of low-k materials in high density fluorocarbon plasma
-
DOI 10.1051/epjap:2004195
-
D. Eon, V. Raballand, G. Cartry, M. -C. Peignon-Fernandez, and Ch. Cardinaud, Eur. Phys. J.: Appl. Phys. EPAPFV 1286-0042 28, 331 (2004). 10.1051/epjap:2004195 (Pubitemid 40002201)
-
(2004)
EPJ Applied Physics
, vol.28
, Issue.3
, pp. 331-337
-
-
Eon, D.1
Raballand, V.2
Cartry, G.3
Peignon-Fernandez, M.-C.4
Cardinaud, Ch.5
-
3
-
-
13244254189
-
Etching of porous SiOCH materials in fluorocarbon-based plasmas
-
DOI 10.1116/1.1815316
-
N. Posseme, T. Chevolleau, O. Joubert, L. Vallier, and N. Rochat, J. Vac. Sci. Technol. B JVTBD9 1071-1023 22, 2772 (2004). 10.1116/1.1815316 (Pubitemid 40185021)
-
(2004)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.22
, Issue.6
, pp. 2772-2784
-
-
Posseme, N.1
Chevolleau, T.2
Joubert, O.3
Valuer, L.4
Rochat, N.5
-
4
-
-
57249105045
-
-
JVTBD9 1071-1023, 10.1116/1.3006021
-
M. Darnon, T. Chevolleau, T. David, N. Posseme, J. Ducote, C. Licitra, L. Vallier, O. Joubert, and J. Torres, J. Vac. Sci. Technol. B JVTBD9 1071-1023 26, 1964 (2008). 10.1116/1.3006021
-
(2008)
J. Vac. Sci. Technol. B
, vol.26
, pp. 1964
-
-
Darnon, M.1
Chevolleau, T.2
David, T.3
Posseme, N.4
Ducote, J.5
Licitra, C.6
Vallier, L.7
Joubert, O.8
Torres, J.9
-
5
-
-
31144458276
-
Porosity-induced effects during C4 F8 90% Ar plasma etching of silica-based ultralow- k dielectrics
-
DOI 10.1116/1.1943439
-
P. Lazzeri, X. Hua, G. S. Oehrlein, M. Barozzi, E. Iacob, and M. Anderle, J. Vac. Sci. Technol. B JVTBD9 1071-1023 23, 1491 (2005). 10.1116/1.1943439 (Pubitemid 43127234)
-
(2005)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.23
, Issue.4
, pp. 1491-1498
-
-
Lazzeri, P.1
Hua, X.2
Oehrlein, G.S.3
Barozzi, M.4
Iacob, E.5
Anderle, M.6
-
6
-
-
33749332519
-
Investigation of surface roughening of low-k films during etching using fluorocarbon plasma beams
-
DOI 10.1116/1.2338044
-
Y. Yin, S. Rasgon, and H. H. Sawin, J. Vac. Sci. Technol. A JVTAD6 0734-2101 24, 2360 (2006). 10.1116/1.2338044 (Pubitemid 44496222)
-
(2006)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.24
, Issue.5
, pp. 2360-2371
-
-
Yin, Y.1
Rasgon, S.2
Sawin, H.H.3
-
8
-
-
37849005054
-
-
JVTAD6 0734-2101, 10.1116/1.2821747
-
Y. Yin and H. H. Sawin, J. Vac. Sci. Technol. A JVTAD6 0734-2101 26, 151 (2008). 10.1116/1.2821747
-
(2008)
J. Vac. Sci. Technol. A
, vol.26
, pp. 151
-
-
Yin, Y.1
Sawin, H.H.2
-
9
-
-
48949115265
-
-
MIENEF 0167-9317, 10.1016/j.mee.2008.05.028
-
N. Posseme, T. Chevolleau, T. David, M. Darnon, J. P. Barnes, O. Louveau, C. Licitra, D. Jalabert, H. Feldis, M. Fayolle, and O. Joubert, Microelectron. Eng. MIENEF 0167-9317 85, 1842 (2008). 10.1016/j.mee.2008.05.028
-
(2008)
Microelectron. Eng.
, vol.85
, pp. 1842
-
-
Posseme, N.1
Chevolleau, T.2
David, T.3
Darnon, M.4
Barnes, J.P.5
Louveau, O.6
Licitra, C.7
Jalabert, D.8
Feldis, H.9
Fayolle, M.10
Joubert, O.11
-
10
-
-
0038516906
-
-
JESOAN 0013-4651, 10.1149/1.1565140
-
J. -N. Sun, Y. Hu, W. E. Frieze, W. Chen, and D. W. Gidley, J. Electrochem. Soc. JESOAN 0013-4651 150, F97 (2003). 10.1149/1.1565140
-
(2003)
J. Electrochem. Soc.
, vol.150
, pp. 97
-
-
Sun, J.-N.1
Hu, Y.2
Frieze, W.E.3
Chen, W.4
Gidley, D.W.5
-
11
-
-
33645673936
-
-
JESOAN 0013-4651, 10.1149/1.2180707
-
R. Kumar, T. K. S. Wong, B. R. Murthy, Y. H. Wang, and N. Balasubramanian, J. Electrochem. Soc. JESOAN 0013-4651 153, G420 (2006). 10.1149/1.2180707
-
(2006)
J. Electrochem. Soc.
, vol.153
, pp. 420
-
-
Kumar, R.1
Wong, T.K.S.2
Murthy, B.R.3
Wang, Y.H.4
Balasubramanian, N.5
-
12
-
-
33751212789
-
Impact of narrow trench geometries on copper film crystallography
-
DOI 10.1016/j.mee.2006.10.005, PII S0167931706005077
-
G. Brunoldi, K. J. Kozaczek, B. Gittleman, and T. Marangon, Microelectron. Eng. MIENEF 0167-9317 83, 2208 (2006). 10.1016/j.mee.2006.10.005 (Pubitemid 44792801)
-
(2006)
Microelectronic Engineering
, vol.83
, Issue.11-12
, pp. 2208-2212
-
-
Brunoldi, G.1
Kozaczek, K.J.2
Gittleman, B.3
Marangon, T.4
-
13
-
-
34548816990
-
Impact of line-edge roughness on resistance and capacitance of scaled interconnects
-
DOI 10.1016/j.mee.2007.05.038, PII S0167931707005631
-
M. Stucchi, M. Bamal, and K. Maex, Microelectron. Eng. MIENEF 0167-9317 84, 2733 (2007). 10.1016/j.mee.2007.05.038 (Pubitemid 47445816)
-
(2007)
Microelectronic Engineering
, vol.84
, Issue.11
, pp. 2733-2737
-
-
Stucchi, M.1
Bamal, M.2
Maex, K.3
-
14
-
-
4544247206
-
-
MIENEF 0167-9317, 10.1016/j.mee.2004.07.005
-
W. Steinhögl, G. Schindler, G. Steinlesberger, M. Traving, and M. Engelhardt, Microelectron. Eng. MIENEF 0167-9317 76, 126 (2004). 10.1016/j.mee.2004.07.005
-
(2004)
Microelectron. Eng.
, vol.76
, pp. 126
-
-
Steinhögl, W.1
Schindler, G.2
Steinlesberger, G.3
Traving, M.4
Engelhardt, M.5
-
15
-
-
33746566024
-
Impact of line edge roughness on copper interconnects
-
DOI 10.1116/1.2217974
-
L. H. A. Leunissen, W. Zhang, W. Wu, and S. H. Brongersma, J. Vac. Sci. Technol. B JVTBD9 1071-1023 24, 1859 (2006). 10.1116/1.2217974 (Pubitemid 44140796)
-
(2006)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.24
, Issue.4
, pp. 1859-1862
-
-
Leunissen, L.H.A.1
Zhang, W.2
Wu, W.3
Brongersma, S.H.4
-
16
-
-
3743070568
-
-
LANGD5 0743-7463, 10.1021/la960189l
-
J. Tamayo and R. Garca, Langmuir LANGD5 0743-7463 12, 4430 (1996). 10.1021/la960189l
-
(1996)
Langmuir
, vol.12
, pp. 4430
-
-
Tamayo, J.1
Garca, R.2
-
18
-
-
0942267561
-
-
JVTBD9 1071-1023, 10.1116/1.1627337
-
N. Posseme, T. Chevolleau, O. Joubert, L. Vallier, and P. Mangiagalli, J. Vac. Sci. Technol. B JVTBD9 1071-1023 21, 2432 (2003). 10.1116/1.1627337
-
(2003)
J. Vac. Sci. Technol. B
, vol.21
, pp. 2432
-
-
Posseme, N.1
Chevolleau, T.2
Joubert, O.3
Vallier, L.4
Mangiagalli, P.5
-
19
-
-
0003809212
-
-
JAPIAU 0021-8979, 10.1063/1.343184
-
G. M. Gallatin and C. B. Zarowin, J. Appl. Phys. JAPIAU 0021-8979 65, 5078 (1989). 10.1063/1.343184
-
(1989)
J. Appl. Phys.
, vol.65
, pp. 5078
-
-
Gallatin, G.M.1
Zarowin, C.B.2
-
20
-
-
21544475638
-
-
JAPIAU 0021-8979, 10.1063/1.1734979
-
W. W. Mullins, J. Appl. Phys. JAPIAU 0021-8979 30, 77 (1959). 10.1063/1.1734979
-
(1959)
J. Appl. Phys.
, vol.30
, pp. 77
-
-
Mullins, W.W.1
-
21
-
-
0000111023
-
-
PRLTAO 0031-9007, 10.1103/PhysRevLett.62.788
-
R. P. U. Karunasiri, R. Bruinsma, and J. Rudnick, Phys. Rev. Lett. PRLTAO 0031-9007 62, 788 (1989). 10.1103/PhysRevLett.62.788
-
(1989)
Phys. Rev. Lett.
, vol.62
, pp. 788
-
-
Karunasiri, R.P.U.1
Bruinsma, R.2
Rudnick, J.3
-
22
-
-
0000888254
-
-
PLEEE8 1063-651X, 10.1103/PhysRevE.47.1007
-
J. H. Yao and H. Guo, Phys. Rev. E PLEEE8 1063-651X 47, 1007 (1993). 10.1103/PhysRevE.47.1007
-
(1993)
Phys. Rev. e
, vol.47
, pp. 1007
-
-
Yao, J.H.1
Guo, H.2
-
23
-
-
4243985570
-
-
PRLTAO 0031-9007, 10.1103/PhysRevLett.66.2104
-
C. Roland and H. Guo, Phys. Rev. Lett. PRLTAO 0031-9007 66, 2104 (1991). 10.1103/PhysRevLett.66.2104
-
(1991)
Phys. Rev. Lett.
, vol.66
, pp. 2104
-
-
Roland, C.1
Guo, H.2
-
24
-
-
4243341332
-
-
PRLTAO 0031-9007, 10.1103/PhysRevLett.63.692
-
G. S. Bales and A. Zangwill, Phys. Rev. Lett. PRLTAO 0031-9007 63, 692 (1989). 10.1103/PhysRevLett.63.692
-
(1989)
Phys. Rev. Lett.
, vol.63
, pp. 692
-
-
Bales, G.S.1
Zangwill, A.2
-
25
-
-
49749103194
-
-
JVTBD9 1071-1023, 10.1116/1.2932091
-
M. Martin and G. Cunge, J. Vac. Sci. Technol. B JVTBD9 1071-1023 26, 1281 (2008). 10.1116/1.2932091
-
(2008)
J. Vac. Sci. Technol. B
, vol.26
, pp. 1281
-
-
Martin, M.1
Cunge, G.2
-
26
-
-
0001722905
-
-
PRBMDO 0163-1829, 10.1103/PhysRevB.61.3012
-
J. T. Drotar, Y. -P. Zhao, T. -M. Lu, and G. -C. Wang, Phys. Rev. B PRBMDO 0163-1829 61, 3012 (2000). 10.1103/PhysRevB.61.3012
-
(2000)
Phys. Rev. B
, vol.61
, pp. 3012
-
-
Drotar, J.T.1
Zhao, Y.-P.2
Lu, T.-M.3
Wang, G.-C.4
-
27
-
-
35348920633
-
Roughness formation during plasma etching of composite materials: A kinetic Monte Carlo approach
-
DOI 10.1109/TPS.2007.906135, Special Issue on Modeling and Simulation of Collisional Low-Temperature Plasmas
-
E. Zakka, V. Constantoudis, and E. Gogolides, IEEE Trans. Plasma Sci. ITPSBD 0093-3813 35, 1359 (2007). 10.1109/TPS.2007.906135 (Pubitemid 47591287)
-
(2007)
IEEE Transactions on Plasma Science
, vol.35
, pp. 1359-1369
-
-
Zakka, E.1
Constantoudis, V.2
Gogolides, E.3
-
28
-
-
0032333160
-
4 etching rates
-
DOI 10.1116/1.581534
-
M. Schaepkens, G. S. Oehrlein, C. Hedlund, L. B. Jonsson, and H. -O. Blom, J. Vac. Sci. Technol. A JVTAD6 0734-2101 16, 3281 (1998). 10.1116/1.581534 (Pubitemid 128161030)
-
(1998)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.16
, Issue.6
, pp. 3281-3286
-
-
Schaepkens, M.1
Oehrlein, G.S.2
Hedlund, C.3
Jonsson, L.B.4
Blom, H.-O.5
-
30
-
-
0001217811
-
-
PRLTAO 0031-9007, 10.1103/PhysRevLett.82.4882
-
Y. -P. Zhao, J. T. Drotar, G. -C. Wang, and T. -M. Lu, Phys. Rev. Lett. PRLTAO 0031-9007 82, 4882 (1999). 10.1103/PhysRevLett.82.4882
-
(1999)
Phys. Rev. Lett.
, vol.82
, pp. 4882
-
-
Zhao, Y.-P.1
Drotar, J.T.2
Wang, G.-C.3
Lu, T.-M.4
-
31
-
-
0000191899
-
-
PRLTAO 0031-9007, 10.1103/PhysRevLett.77.3049
-
G. S. Hwang, C. M. Anderson, M. J. Gordon, T. A. Moore, T. K. Minton, and K. P. Giapis, Phys. Rev. Lett. PRLTAO 0031-9007 77, 3049 (1996). 10.1103/PhysRevLett.77.3049
-
(1996)
Phys. Rev. Lett.
, vol.77
, pp. 3049
-
-
Hwang, G.S.1
Anderson, C.M.2
Gordon, M.J.3
Moore, T.A.4
Minton, T.K.5
Giapis, K.P.6
-
32
-
-
0000356191
-
-
JAPIAU 0021-8979, 10.1063/1.356622
-
R. Ṕtri, P. Brault, O. Vatel, D. Henry, E. Andŕ, P. Dumas, and F. Salvan, J. Appl. Phys. JAPIAU 0021-8979 75, 7498 (1994). 10.1063/1.356622
-
(1994)
J. Appl. Phys.
, vol.75
, pp. 7498
-
-
Ṕtri, R.1
Brault, P.2
Vatel, O.3
Henry, D.4
Andŕ, E.5
Dumas, P.6
Salvan, F.7
-
33
-
-
17344378057
-
-
MIENEF 0167-9317, 10.1016/S0167-9317(04)00117-0
-
E. Gogolides, C. Boukouras, G. Kokkoris, O. Brani, A. Tserepi, and V. Constantoudis, Microelectron. Eng. MIENEF 0167-9317 73-74, 312 (2004). 10.1016/S0167-9317(04)00117-0
-
(2004)
Microelectron. Eng.
, vol.73-74
, pp. 312
-
-
Gogolides, E.1
Boukouras, C.2
Kokkoris, G.3
Brani, O.4
Tserepi, A.5
Constantoudis, V.6
-
34
-
-
31044448548
-
Quantitative control of etching reactions on various SiOCH materials
-
DOI 10.1116/1.1861938
-
T. Tatsumi and K. Urata, J. Vac. Sci. Technol. A JVTAD6 0734-2101 23, 938 (2005). 10.1116/1.1861938 (Pubitemid 43119231)
-
(2005)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.23
, Issue.4
, pp. 938-946
-
-
Tatsumi, T.1
Urata, K.2
Nagahata, K.3
Saitoh, T.4
Nogami, Y.5
Shinohara, K.6
-
35
-
-
0022092551
-
-
JESOAN 0013-4651, 10.1149/1.2114195
-
D. Chin, S. H. Dhong, and G. J. Long, J. Electrochem. Soc. JESOAN 0013-4651 132, 1705 (1985). 10.1149/1.2114195
-
(1985)
J. Electrochem. Soc.
, vol.132
, pp. 1705
-
-
Chin, D.1
Dhong, S.H.2
Long, G.J.3
-
36
-
-
21344497429
-
Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma
-
DOI 10.1116/1.578850
-
O. Joubert, G. S. Oehrlein, and M. Surendra, J. Vac. Sci. Technol. A JVTAD6 0734-2101 12, 665 (1994). 10.1116/1.578850 (Pubitemid 24791607)
-
(1994)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.12
, Issue.3
, pp. 665
-
-
Joubert, O.1
Oehrlein, G.S.2
Surendra, M.3
-
37
-
-
0005208812
-
Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas
-
DOI 10.1063/1.116772, PII S0003695196008017
-
M. F. Doemling, N. R. Rueger, and G. S. Oehrlein, Appl. Phys. Lett. APPLAB 0003-6951 68, 10 (1996). 10.1063/1.116772 (Pubitemid 126688190)
-
(1996)
Applied Physics Letters
, vol.68
, Issue.1
, pp. 10-12
-
-
Doemling, M.F.1
Rueger, N.R.2
Oehrlein, G.S.3
-
38
-
-
0042031174
-
-
VACUAV 0042-207X, 10.1016/S0042-207X(03)00099-X
-
R. Knizikevicius, Vacuum VACUAV 0042-207X 72, 53 (2003). 10.1016/S0042-207X(03)00099-X
-
(2003)
Vacuum
, vol.72
, pp. 53
-
-
Knizikevicius, R.1
-
39
-
-
79955994680
-
Depth-profiling plasma-induced densification of porous low-k thin films using positronium annihilation lifetime spectroscopy
-
DOI 10.1063/1.1501767
-
J. -N. Sun, D. W. Gidley, Y. Hu, W. E. Frieze, and E. T. Ryan, Appl. Phys. Lett. APPLAB 0003-6951 81, 1447 (2002). 10.1063/1.1501767 (Pubitemid 34992927)
-
(2002)
Applied Physics Letters
, vol.81
, Issue.8
, pp. 1447
-
-
Sun, J.-N.1
Gidley, D.W.2
Hu, Y.3
Frieze, W.E.4
Ryan, E.T.5
-
40
-
-
37149039506
-
Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas
-
DOI 10.1116/1.2804615
-
N. Posseme, T. Chevolleau, T. David, M. Darnon, O. Louveau, and O. Joubert, J. Vac. Sci. Technol. B JVTBD9 1071-1023 25, 1928 (2007). 10.1116/1.2804615 (Pubitemid 350255816)
-
(2007)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.25
, Issue.6
, pp. 1928-1940
-
-
Posseme, N.1
Chevolleau, T.2
David, T.3
Darnon, M.4
Louveau, O.5
Joubert, O.6
-
41
-
-
0037091477
-
Attenuated total reflection spectroscopy for infrared analysis of thin layers on a semiconductor substrate
-
DOI 10.1063/1.1464231
-
N. Rochat, A. Chabli, F. Bertin, M. Olivier, C. Vergnaud, and P. Mur, J. Appl. Phys. JAPIAU 0021-8979 91, 5029 (2002). 10.1063/1.1464231 (Pubitemid 34598964)
-
(2002)
Journal of Applied Physics
, vol.91
, Issue.8
, pp. 5029
-
-
Rochat, N.1
Chabli, A.2
Bertin, F.3
Olivier, M.4
Vergnaud, C.5
Mur, P.6
-
42
-
-
0000302625
-
-
JAPIAU 0021-8979, 10.1063/1.346819
-
S. G. Ingram, J. Appl. Phys. JAPIAU 0021-8979 68, 500 (1990). 10.1063/1.346819
-
(1990)
J. Appl. Phys.
, vol.68
, pp. 500
-
-
Ingram, S.G.1
-
44
-
-
33947510527
-
Transient roughening behaviour and spontaneous pattern formation during plasma etching of nanoporous silica
-
DOI 10.1088/0957-4484/18/5/055305, PII S0957448407268175
-
T. Kwon, H. -C. Kan, G. S. Oehrlein, and R. J. Phaneuf, Nanotechnology NNOTER 0957-4484 18, 055305 (2007). 10.1088/0957-4484/18/5/055305 (Pubitemid 46472369)
-
(2007)
Nanotechnology
, vol.18
, Issue.5
, pp. 055305
-
-
Kwon, T.1
Kan, H.-C.2
Oehrlein, G.S.3
Phaneuf, R.J.4
-
45
-
-
53849108443
-
-
MIENEF 0167-9317, 10.1016/j.mee.2008.06.025
-
M. Darnon, T. Chevolleau, D. Eon, R. Bouyssou, B. Pelissier, L. Vallier, O. Joubert, N. Posseme, T. David, F. Bailly, and J. Torres, Microelectron. Eng. MIENEF 0167-9317 85, 2226 (2008). 10.1016/j.mee.2008.06.025
-
(2008)
Microelectron. Eng.
, vol.85
, pp. 2226
-
-
Darnon, M.1
Chevolleau, T.2
Eon, D.3
Bouyssou, R.4
Pelissier, B.5
Vallier, L.6
Joubert, O.7
Posseme, N.8
David, T.9
Bailly, F.10
Torres, J.11
-
46
-
-
77952509112
-
-
JJAPA5 0021-4922, 10.1143/JJAP.48.04C018
-
S. Demuynck, H. Kim, C. Huffman, M. Darnon, H. Struyf, J. Versluijs, M. Claes, G. Vereecke, P. Verdonck, H. Volders, N. Heylen, K. Kellens, D. De Roest, H. Sprey, and G. Beyer, Jpn. J. Appl. Phys. JJAPA5 0021-4922 48, 04C018 (2009). 10.1143/JJAP.48.04C018
-
(2009)
Jpn. J. Appl. Phys.
, vol.48
-
-
Demuynck, S.1
Kim, H.2
Huffman, C.3
Darnon, M.4
Struyf, H.5
Versluijs, J.6
Claes, M.7
Vereecke, G.8
Verdonck, P.9
Volders, H.10
Heylen, N.11
Kellens, K.12
De Roest, D.13
Sprey, H.14
Beyer, G.15
-
47
-
-
21644448705
-
-
TDIMD5 0163-1918
-
O. Hinsinger, R. Fox, E. Sabouret, C. Goldberg, C. Verove, W. Besling, P. Brun, E. Josse, C. Monjet, O. Belmont, J. Van Hassel, B. G. Sharma, J. P. Jacquemin, P. Vannier, A. Humbert, D. Bunel, R. Gonella, E. Mastromatteo, D. Reber, A. Farcy, J. Mueller, P. Christie, V. H. Nguyen, C. Cregut, and T. Berger, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2004, 317.
-
(2004)
Tech. Dig. - Int. Electron Devices Meet.
, pp. 317
-
-
Hinsinger, O.1
Fox, R.2
Sabouret, E.3
Goldberg, C.4
Verove, C.5
Besling, W.6
Brun, P.7
Josse, E.8
Monjet, C.9
Belmont, O.10
Van Hassel, J.11
Sharma, B.G.12
Jacquemin, J.P.13
Vannier, P.14
Humbert, A.15
Bunel, D.16
Gonella, R.17
Mastromatteo, E.18
Reber, D.19
Farcy, A.20
Mueller, J.21
Christie, P.22
Nguyen, V.H.23
Cregut, C.24
Berger, T.25
more..
-
48
-
-
77955211303
-
-
2nd ed., Leuven
-
J. -F. de Marneffe, D. Goossens, D. Hendrickx, H. Struyf, T. Conard, A. Franquet, and W. Boullart, Plasma Etch and Strip in Microelectronics Conference, 2nd ed., Leuven, 2009, (http://www.pesm2009.be).
-
(2009)
Plasma Etch and Striin Microelectronics Conference
-
-
De Marneffe, J.-F.1
Goossens, D.2
Hendrickx, D.3
Struyf, H.4
Conard, T.5
Franquet, A.6
Boullart, W.7
-
49
-
-
77955185906
-
-
(unpublished)
-
N. Posseme, T. David, M. Darnon, T. Chevolleau, and O. Joubert, 6th International Conference on Microelectronics and Interfaces, 2005 (unpublished).
-
(2005)
6th International Conference on Microelectronics and Interfaces
-
-
Posseme, N.1
David, T.2
Darnon, M.3
Chevolleau, T.4
Joubert, O.5
|