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Volumn 72, Issue 1, 2003, Pages 53-57

Simulation of inverse reactive ion etching lag

Author keywords

Fluorocarbon plasma; Inverse RIE lag; Silicon

Indexed keywords

ADSORPTION; CHEMICAL ACTIVATION; COMPOSITION; DESORPTION; MICROSTRUCTURE; PASSIVATION; PLASMAS; REACTION KINETICS; SPUTTER DEPOSITION; SURFACE REACTIONS;

EID: 0042031174     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(03)00099-X     Document Type: Article
Times cited : (5)

References (10)
  • 7
    • 0003626960 scopus 로고    scopus 로고
    • Williams PF, editors. Plasma Processing of Semiconductors, Dordrecht: Kluwer Academic Publishers
    • Oehrlein GS. In: Williams PF, editors. Plasma Processing of Semiconductors, NATO ASI Series E: 336, Dordrecht: Kluwer Academic Publishers, 1997; p. 73-88.
    • (1997) NATO ASI Series E , vol.336 , pp. 73-88
    • Oehrlein, G.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.