Porosity-induced effects during C4 F8 90% Ar plasma etching of silica-based ultralow- k dielectrics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1491-1498

  Lazzeri, P ^a   Hua, X ^b   Oehrlein, G S ^b   Barozzi, M ^a   Iacob, E ^a   Anderle, M ^a  

^a ITC IRST   (Italy)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NONPOROUS SILICA (NPS); ORGANOSILICATE GLASS; PRISTINE MATERIALS;

ARGON; CHEMICAL MODIFICATION; PLASMA ETCHING; POROSITY; SILICA;

DIELECTRIC MATERIALS;

EID: 31144458276     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1943439     Document Type: Article

References (21)

1. The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, http://www.itrs.net/Common/2004Update/2004Update.htm
2. T. E. F. M. Standaert, P. J. Matsuo, S. D. Allen, G. S. Oehrlein, and T. J. Dalton, J. Vac. Sci. Technol. A 17, 741 (2003).
3. X. Hua, X. Wang, D. Fuentevilla, G. S. Oehrlein, F. G. Celii, and K. H. R. Kirmse, J. Vac. Sci. Technol. A 21, 1708 (2003).
4. M. Schaepkens and G. S. Oehrlein, J. Electrochem. Soc. 148, C211 (2001).
5. X. Li, X. Hua, L. Ling, G. S. Oehrlein, M. Barela, and H. M. Anderson, J. Vac. Sci. Technol. A 20, 2052 (2002).
6. X. Li, L. Ling, X. Hua, M. Fukasawa, G. S. Oehrlein, M. Barela, and H. M. Anderson, J. Vac. Sci. Technol. A 21, 284 (2003).
7. X. Li, L. Ling, X. Hua, G. S. Oehrlein, Y. Wang, and H. M Anderson, J. Vac. Sci. Technol. A 21, 1955 (2003).
8. X. Hua, C. Stolz, G. S. Oehrlein, P. Lazzeri, N. Coghe, M. Anderle, C. K. Inoki, T. S. Kuan, and P. Jiang, J. Vac. Sci. Technol. A 23, 151 (2005).
9. R. D. Miller, J. L. Hedrick, D. Y. Yoon, R. F. Cook, and J. P. Hummel, MRS Bull. 22, 44 (1997).
10. Q. Huang, C. W. Frank, D. Mecerreyes, and R. D. Miller, Polym. Mater. Sci. Eng. 84, 792 (2001).
11. T. E. F. M. Standaert, E. A. Joseph, G. S. Oehrlein, A. Jain, W. N. Gill, P. C. Wayner, Jr., and J. L. Plawsky, J. Vac. Sci. Technol. A 18, 2742 (2000).
12. B. K. Lavine, in Encyclopedia of Analytical Chemistry, edited by, R. A. Meyers, (J. Wiley & Sons, Chichester, 2000), pp. 9689-9710.
13. K. L. Westra and D. J. Thomson, J. Vac. Sci. Technol. B 13, 344 (1995).
14. Y. Gao, J. Appl. Phys. 64, 3760 (1988).
15. C. W. Magee, W. L. Harrington, and E. M. Botnick, Int. J. Mass Spectrom. Ion Phys. 130, 45 (1990).
16. S. A. Vitale and H. H. Sawin, J. Vac. Sci. Technol. A 20, 651 (2002).
17. D. Shamiryan, K. Weidner, W. D. Gray, M. R. Baklanov, S. Vanhaelemeersch, and K. Maex, Microelectron. Eng. 64, 361 (2002).
18. M. Matsui, T. Tatsumi, and M. Sekine, J. Vac. Sci. Technol. A 19, 2089 (2001).
19. A. J. Bariya, C. W. Frank, and J. P. McVittie, J. Electrochem. Soc. 137, 2575 (1990).
20. T. E. F. M. Standaert, E. A. Joseph, G. S. Oehrlein, A. Jain, W. N. Gill, P. C. Wayner, Jr., and J. L. Plawsky, J. Vac. Sci. Technol. A 18, 2742 (2000).
21. A. Sankadan and M. J. Kushner, Appl. Phys. Lett. 82, 1824 (2003).