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Journal of the Electrochemical Society

Volumn 153, Issue 5, 2006, Pages

Effects of plasma treatments on ultralow- k dielectric film and Ta barrier properties in Cu damascene processing

(5) Kumar, R a,b Wong, T K S b Murthy, B R a Wang, Y H a Balasubramanian, N a

a INSTITUTE OF MICROELECTRONICS (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRIC BREAKDOWN; ELECTRICAL ENGINEERING; HYDROPHOBICITY; PERMITTIVITY; PLASMA THEORY; TANTALUM;

DAMASCENE; PLASMA-TREATED FILM; POROUS METHYL-SILSESQUIOXANE (P-MSQ); ULTRALOW- K DIELECTRIC FILM;

DIELECTRIC FILMS;

EID: 33645673936 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2180707 Document Type: Article

Times cited : (4)

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