Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 6, 1998, Pages 3281-3286

  Schaepkens, Marc ^a   Oehrlein, Gottlieb S ^a   Hedlund, Christer ^b   Jonsson, Lars B ^b   Blom, Hans Olof ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032333160     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581534     Document Type: Article

References (22)

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