Etching of porous SiOCH materials in fluorocarbon-based plasmas

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 2772-2784

  Posseme, N ^a   Chevolleau, T ^b   Joubert, O ^b   Valuer, L ^b   Rochat, N ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELLIPSOMETRY; FLUOROCARBONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTEGRATED CIRCUITS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; POROSITY; POROUS SILICON; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM DEGRADATION; INTERLAYER DIELECTRICS (ILD); PLASMA SURFACE INTERACTION; SPECTROSCOPIC ELLIPSOMETRY (SE);

ETCHING;

EID: 13244254189     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1815316     Document Type: Article

References (24)

1. A. Grill and V. Patel, Appl. Phys. Lett. 9, 803 (2001).
2. J. L. Hedrick, R. D. Miller, C. J. Hawker, K. R. Carter, W. Volksen, Do. Y. Yoon, and M. Trollsås, Adv, Mater. (Weinheim, Ger.) 10, 1049 (1998).
3. J. M. Park and S. W. Rhee, J. Electrochem. Soc. 149, F92 (2002).
4. M. J. Buie, J. T. P. Pender, and M. Dahimene, J. Vac. Sci. Technol. A 16, 1464 (1998).
5. P. Mangiagalli, C. Frum, L. Sabnani, Z. Sui, T. Chevolleau, N. Posseme, and M. Assous, Proceedings of the Advanced Semiconductor Manufacturing Conference, 2003.
6. N. Posseme, T. Chevolleau, O. Joubert, L. Vallier, and P. Mangiagalli, J. Vac. Sci. Technol. B 21, 2432 (2003).
7. P. Czuprynski and O. Joubert, J. Vac. Sci. Technol. B 16, 1051 (1998).
8. O. Joubert, P. Czuprynski, F. H. Bell, P. Berruyer, and R. Blanc, J. Vac. Sci. Technol. B 15, 629 (1997).
9. J. H. Scofield, J. Electron Spectrosc. Relat. Phenom. 8, 129 (1976).
10. N. Rochat, A. Chabli, F. Bertin, M. Olivier, C. Vergnaud, and P. Mur, J. Appl. Phys. 91, 5029 (2002).
11. C. Cardinaud and G. Turban, Appl. Surf. Sci. 45, 109 (1990).
12. T. E. F. M. Standaert, E. A. Joseph, G. S. Orehlein, A. Jain, W. N. Gill, P.C. Wayner, Jr., and J. L. Plawsky, J. Vac. Sci. Technol. A 18, 2742 (2000).
13. S. J. Wang, I. S. Jin, and H. Park, Surf. Coat. Technol. 100-101, 59 (1998).
14. A. Sankaran and M. J. Kushner, Appl. Phys. Lett. 82, 1824 (2003).
15. Y.-H. Kim, M. S. Hwang, H. J. Kim, J. Y. Kim, and Y. Lee, J. Appl. Phys. 90, 3367 (2001).
16. C. Vallee, A. Goullet, A. Granier, A. Van der Lee, J. Durand, and C. Marliere, J. Non-Cryst. Solids 272 (2000).
17. A. Grill and D. A. Neumayer, Appl. Phys. (N.Y.) 94, 6697 (2003).
18. J. Y. Kim, M. S. Hwang, Y.-H. Kim, H. J. Kim, and Y. Lee, J. Appl. Phys. 90, 2469 (2001).
19. L. M. Han, J. Pan, S. Chen, N. Balasubramanian, J. Shi, L. S. Wong, and P. D. Foo, J. Electrochem. Soc. 148, F148 (2001).
20. J. A. Theil, D. V. Tsu, M.W. Watkins, S.S. Kim, and G. Lukovsky, J. Vac. Sci. Technol. A 8, 1374 (1990).
21. C. Biloiu et al., J. Vac. Sci. Teehnol. A 22, 1158 (2004).
22. D. Kim and Y. Lee, Appl. Phys. Lett. 69, 2776 (1996).
23. S.J. Wang, H. Park, O. Y. Yeom, and S. Hyun, Appl. Surf. Sci. 169-170, 457 (2001).
24. O. Joubert and P. Czuprynski, Jpn. J. Appl. Phys., Part 1 38, 6154 (1999).