Etching of low-k materials in high density fluorocarbon plasma

EPJ Applied Physics

Volumn 28, Issue 3, 2004, Pages 331-337

  Eon, D ^a   Raballand, V ^a   Cartry, G ^a   Peignon Fernandez, M C ^a   Cardinaud, Ch ^a  

^a UNIVERSITÉ DE NANTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CLEANING; ELECTRIC CONTACTS; EMISSION SPECTROSCOPY; FLUOROCARBONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; INTEGRATED CIRCUITS; METALLIZING; PERMITTIVITY; PLASMA DENSITY; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEVICE ISOLATION; DIELECTRIC THIN FILMS; OPTICAL EMISSION SPECTROSCOPY; OPTICAL MULTICHANNEL ANALYZERS (OMA);

DIELECTRIC FILMS;

EID: 10844287997     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004195     Document Type: Article

References (23)

1. K. Maex, M.R. Baklanov, D. Shamiryan, F. Lacopi, S.H. Brongersma, Y.S. Yanovitskaya, J. Appl. Phys. 93, 8793 (2003)
2. J.Y. Kim, M.S. Hwang, Y.-H. Kim, H.J. Kim, Y. Lee, J. Appl. Phys. 90, 2469 (2001)
3. M. Fayolle, J. Torres, G. Passemard, F. Fusalbe, G. Fanget, D. Louis, M. Assous, O. Louveau, M. Rivoire, K. Haxaire, M. Mourier, S. Maitrejean, P. Besson, L. Broussous, L. Arnaud, H. Feldis, Microelectron. Eng. 64, 35 (2002)
4. K. Mosig, T. Jacobs, K. Brennan, M. Rasco, J. Wolf, R. Augur, Microelectron. Eng. 64, 11 (2002)
5. R.A. Donaton, B. Coenegrachts, M. Maenhoudt, I. Pollentier, H. Struyf, S. Vanhaelemeersch, I. Vos, M. Meuris, W. Fyen, G. Beyer, Z. Tokei, M. Stucchi, I. Vervoort, D. De Roest, K. Maex, Microelectron. Eng. 55, 277 (2001)
6. F. Gaboriau, Ph.D. thesis, Nantes University, France, 2001 (in French)
7. F. Gaboriau, M.-C. Peignon, G. Cartry, L. Rolland, D. Eon, C. Cardinaud, G. Turban, J. Vac. Sci. Technol. A 20-3, 919 (2002)
8. F. Gaboriau, G. Cartry, M.C. Peignon, Ch. Cardinaud, J. Vac. Sci. Technol. B 20, 1514 (2002)
9. T.E.F.M. Standaert, P.J. Matsuo, S.D. Allen, G.S. Oehrlein, T.J. Dalton, T.-M. Lu, R. Gutmann, Matter. Res. Soc. Symp. Proc. 511, 265 (1998)
10. T.E.F.M. Standaert, P.J. Matsuo, S.D. Allen, G.S. Oehrlein, T.J. Dalton, J. Vac. Sci. Technol. A 17, 741 (1999)
11. J.W. Coburn, M. Chen, J. Appl. Phys. 51, 3134 (1980)
12. S.-M. Kong, H.-J. Choi, B.-T. lee. S.-Y. Han, J.L. Lee, J. Electron. Mat. 31, 209 (2002)
13. e Congrès Plasmas de la Société Française de Physique, Cadarache, 2003, edited by X.L. Zou, p. 66 (in French)
14. F. Gaboriau, G. Cartry, M.-C. Peignon, L. Rolland, C. Cardinaud, G. Turban, in Proceedings of the 15th International Symposium on Plasma Chemistry, Orléans, 2001, edited by A. Bouchoule, J.M. Pouvesle, A.L. Thomann, J.M. Bauchire, E. Robert (GREMI, CNRS/University of Orleans, 2001), p. 1689
15. M.A. Lieberman, A.J. Lichtenberg, A.M. Marakhtanov, Appl. Phys. Lett. 75, 3617 (1999)
16. P. Chabert, A.J. Lichtenberg, M.A. Lieberman, A.M. Marakhtanov, Plasma Sources Sci. Technol. 10, 478 (2001)
17. M. Tuszewski, J. Appl. Phys. 79, 8967 (1996)
18. C.S. Corr, P.G. Steen, W.G. Graham, Plasma Sources Sci. Technol. 12, 265 (2003)
19. L. Rolland, Ph.D. thesis, Nantes University, France, 2000 (in French)
20. K. Miyata, M. Hori, T. Goto, J. Vac. Sci. Technol. A 14, 2343 (1996)
21. Y.S. Mor, T.C. Chang, P.T. Liu, T.M. Tsai, C.W. Chen, S.T. Yan, C.J. Chu, W.F. Wu, P.M. Pan, W. Lur, S.M. Sze, J. Vac. Sci. Technol. B 20, 1334 (2002)
22. A. Grill, D.A. Neumayer, J. Appl. Phys. 94, 6697 (2003)
23. N. Posseme, T. Chevolleau, O. Joubert, L. Vallier, J. Vac. Sci. Technol. B 21, 2432 (2003)