Reaction mechanism, bonding, and thermal stability of 1-alkanethiols self-assembled on halogenated Ge surfaces

Langmuir

Volumn 26, Issue 11, 2010, Pages 8419-8429

  Ardalan, Pendar ^a   Sun, Yun ^b   Pianetta, Piero ^b   Musgrave, Charles B ^a,c   Bent, Stacey F ^a  

^a Stanford University   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c UCB 450   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1-OCTADECANETHIOL; ALKANETHIOLS; DENSITY FUNCTIONAL THEORY CALCULATIONS; DFT CALCULATION; DITHIOLATES; GE SURFACES; GE(100); GE(100) SURFACE; PHOTOEMISSION SPECTROSCOPY; REACTION MECHANISM; ROOM TEMPERATURE; SAM FORMATION; SELF-ASSEMBLED; SURFACE BONDING; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY; THERMAL STABILITY; THERMALLY STABLE; THIOLATES;

ADSORPTION; ATOMIC SPECTROSCOPY; CARBIDES; DENSITY FUNCTIONAL THEORY; EMISSION SPECTROSCOPY; GERMANIUM; LUMINESCENCE OF ORGANIC SOLIDS; PHOTOEMISSION; SELF ASSEMBLED MONOLAYERS; SULFUR; SYNCHROTRON RADIATION; THERMODYNAMIC STABILITY; VACUUM;

SURFACE REACTIONS;

EID: 77954559057     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la904864c     Document Type: Article

References (93)

1. Loscutoff, P. W.; Bent, S. F. Annu. Rev. Phys. Chem.. 2006, 57, 467-495.
2. Misra, D.; Garg, R.; Srinivasan, P.; Rahim, N.; Chowdhury, N. A. Mater. Sci Semicond. Process. 2006, 9, 741-748.
3. Kamata, Y. Mater. Today 2008, 11, 30-38.
4. Rivillon. S.; Chabal, Y. J.; Amy, F.; Kahn, A. Appl. Phys. Lett. 2005, 87, 253101.
5. Onsia, B.; Conard, T.; De Gendt, S.; Heyns, M.; Hoflijk, I.; Mertens, P.; Meuris, M.; Raskin, G.; Sioncke, S.; Teerlinck, I.; Theuwis, A.; Van Steenbergen, J.; Vinckier, G Solid State Phenom. 2005, 103-104, 27-30.
6. Prabhakaran, K.; Ogino, T. Surf. Sci. 1995, 325, 263.
7. Prabhakaran, K.; Maeda, F.; Watanabe, Y.; Ogino, T. Appl. Phys. Lett. 2000, 76, 2244-2246.
8. Caymax, M.; Elshocht, S. V.; Houssa, M,; Delabie, A.; Conard, T.; Meuris, M.; Heyns, M. M.; Dimoulas, A.; Spiga, S.; Fanciulli, M.; Seo, J. W.; Goncharova, L. V. Mater. Sci. Eng., B 2006, 135, 256-260.
9. Soe, J. W.; Dieker, G; Locquet, J.-P.; Mavrou, G.; Dimoulas, A. Appl. Phys. Lett. 2005,87, 221906.
10. Chui, C. O.; Kim, H.; McIntyre, P. C.; Sarasawat. C. IEEE Electron Device Lett. 2004, 25, 274-276.
11. Shang, H.; Frank, M. M.; Gusev, E. P.; Chu, J. O.; Bedell, S. W.; Guarini, K. W.; Leong, M. IBM J. Res. Dev. 2006, 4/5, 377-386.
12. Schnell, R. D.; Himpsel, F. J.; Bogen, A.; Rieger, D.; Steinmann, W. Phys. Rev. B 1985, 32, 8052-8056.
13. Roche, J.; Ryan, P.; Hughes, G. J. Appl. Surf. Sci. 2001, 174, 271-274.
14. Weser, T.; Bogen, A.; Konrad, B.; Schnell, R. D.; Schug. C. A.; Steinmann, W. Phys. Rev. B 1986, 35, 8184-8188.
15. Gothelid, M.; LeLay, G.; Wigren, C.; Bjorkqvist, M.; Karlsson. U. O. Surf. Sci. 1997, 371, 264.
16. Ardalan, P.; Davani, N.; Musgrave, C. B. J. Phys. Chem. C 2007, 111, 3692-3699.
17. Filler, M. A.; VanDeventer, J. A.; Keung, A. J.; Bent, S. F. J. Am. Chem. Soc. 2006, 128, 770-779.
18. Cullen, G. W.; Amick, J. A.;Gerlich, D. J. Electrochem. Soc. 1962, 109, 124.
19. Fouchier, M.; McEllistrem, M. T.; Boland, J. J. Surf. Sci. 1997, 385, L905-L910.
20. Bachelet, G. B.; Schlüter, M. Phys. Rev. B 1983, 28, 2302.
21. Cao, S.; Tang, J. C.; Shen, S. L. J. Phys.: Condens. Matter 2003, 15, 5261-5268.
22. Sun, S.; Liu, Z.; Lee, D.-I.; Peterson, S.; Pianetta, P. Appl. Phys. Lett. 2006, 88, 021903.
23. Sun, S.; Sun, Y.; Liu, Z.; Lee, D.-I.; Pianetta, P. Appl. Phys. Lett. 2006, 89, 231925.
24. Deegan, T.; Hughes, G. Appl. Surf. Sci. 1998, 123/124, 66-70.
25. Lu, Z. H. Appl. Phys. Lett. 1996, 68, 520-522.
26. Kim, J.; McVittie, J.; Saraswat, K.; Nishi, Y. ECS Trans. 2006, 3, 1191-1196.
27. Kim, J.; McVittie, J.; Saraswat, K.; Nishi, Y. In 8th International Symposium on Ultra Clean Processing of Silicon Surfaces, Antwerp, Belgium; Motens, P., Meuris, M., Heyns, M., Eds.; Trans Tech Publications: Switzerland, 2006.
28. Kim, J.; Saraswat, K.; Nishi, Y. ECS Trans. 2005, 1, 214-219.
29. Lu, Y. F.; Mai, Z. H.; Song, W. D.; Chim, W. K. Appl. Phys. A: Mater. Sci. Process. 2000, 70, 403-406.
30. Kim, J.; Mcvittie, J.; Sarasawat, K.; Nishi, Y. Study of Germanium Surface for Wet Cleaning Applications, SRC/SEMATECH Engineering Research Center for Environmentally Benign Semiconductor Manufacturing; teleconference, 16 May 2006.
31. Bodlaki, D.; Yamamoto, H.; Waldeck, D. H.; Borguet, E. Surf. Sci. 2003, 543, 63-74.
32. Cao, S.; Tang, J. C.; Wang, L.; Zhu, P.; Shen, S. L. Surf Sci. 2002, 505, 289.
33. Okumura, H.; Akane, T.; Matsumoto, S. Appl. Surf. Sci. 1.998, 125, 125-128.
34. Hovis, J. S.; Hamers, R. J.; Greenlief, G M. Surf. Sci. 1999, 440, L815-L819.
35. Ardalan, P.; Pickett, E. R.; Harris, J. S., Jr.; Marshall, A. F.; Bent, S. F. Appl. Phys. Lett. 2008, 92, 252902.
36. Ardalan, P.; Musgrave, C. B.; Bent, S. F. Langmuir 2009, 25, 2013-2025.
37. Frank, M. M.; Koester, S. J.; Copel, M.;Ott, J. O.; Paruchuri, V. K.; Shang, H.; Loesing, R. Appl. Phys. Lett. 2006, 89, 112905.
38. Wu, N.; Zhang, Q.; Zhu, C.; Chan, D. S. H.; Li, M. F.; Balasubramanian, N.; Chin, A.; Kwong, D.-L. Appl. Phys. Lett. 2004, 85, 4127-4129.
39. He, J.; Lu, Z. H.; Mitchell. S. A.; Wayner, D. D. M. J. Am. Chem. Soc. 1998, 120, 2660-2661.
40. Choi. K.; Buriak, J. M. Langmuir 2000, 16, 7737-7741.
41. Kosuri, M. R.; Cone, R. Li, Q.; Han, S. M.; Bunker, B. C. Mayer, T. M. Langmuir 2004, 20, 835-840.
42. Han, S. M.; Ashurst, W. R.; Carraro, C.; Maboudian, R. J. Am. Chem. Soc. 2001, 123, 2422-2425.
43. Maeda, T.; Takagi, S.; Ohnishi, T.; Lippmaa, M. Mater. Sci. Semicond. Process. 2006, 9, 706-710.
44. Göthelid, M.; LeLay, G.; Wigren, C.; Björkqvist, M.; Rad, M.; Karlsson, U. O. Appl. Surf. Sci. 1997, 115, 87-95.
45. Chen, R. Surface Modification for Area Selective Atomic Layer Deposition on Silicon and Germanium. Ph.D. Thesis, Stanford University, 2006.
46. Love, J. C.; Estroff, L. A.; Kriebel, J. R.: Nuzzo, R. G.; Whitesides, G. M. Chem. Rev. 2005, 105, 1103-1170.
47. Ulman, A. Chem. Rev. 1996, 96, 1533-1554.
48. Voznyy, O.; Dubowski, J. J. J. Phys. Chem. B 2006, 110, 23619-23622.
49. Jun, Y.; Zhu, X.-Y.; Hsu, J. W. P. Langmuir 2006, 22, 3627-3632.
50. McGuiness, C. L.; Blasini, D.; Masejewski, J. P.; Uppili, S.; Cabarcos, O. M.; Smilgies, D.; Allara, D. L. ACS Nano 2007, 1, 30-49.
51. McGuiness, C. L.; Shaporenko, A.; Mars, C. K.; Uppili, S.; Zhanikov, M.; Allara, D. L. J. Am. Chem. Soc. 2006, 128, 5231-5243.
52. McGuiness, C. L.; Shaporenko, A.; Zhanikov, M.; Walker, A. V.; Allara, D. L. J. Phys. Chem. C 2007, 111, 4226-4234.
53. Ardalan, P.; Bent, S. F. Unpublished results.
54. Tillman, N.; Ulman, A.; Schildkraut, J. S.; Penner, T. L. J. Am. Chem. Soc. 1988, 110, 6136-6144.
55. Snyder, R. G.; Strauss, H. L.; Elliger. C. A. J. Phys. Chem. 1982, 56, 5145-5150.
56. Shirley, D. A. Phys. Rev. B 1972, 5, 4709-4714.
57. Heister, R.; Zhamikov, M.; Grunze, M.; Johansson, L. S. O.; Ulman, A. Langmuir 2001, 17, 8-11.
58. Cavalleri, O.; Gonella, G.; Terreni, S.; Vignolo, M.; Pelori, P.; Floreano, L.; Morgante, A.; Canepa, M.; Rolandi, R. J. Phys.: Condens. Matter 2004, 16 S2477-S2482.
59. Miller, T.; Rosenwinkel, E.; Chiang, T.-G Solid State Commun. 1.983,47, 935-938
60. Ranke, W.; Jacobi, K. Surf Sci. 1977, 63, 33-44.
61. Mui, C.; Han, J. H.; Wang, G. T.; Musgrave, C. B.; Bent, S. F. J. Am. Chem. Soc. 2002, 124, 4027.
62. Widjaja, Y.; B, M. G Surf. Sci. 2000, 469, 9.
63. Widjaja, Y.; M, M. M.; B, M. C. J. Phys. Chem. B 2000, 104, 2527.
64. Trucks, G. W.; Raghavachari, K.; Higashi, G. S.; Chabal, Y. J. Phys. Rev. Lett. 1990, 65, 504.
65. Hohenberg, H.; Kohn, W. Phys. Rev. B 1964, 1, 36B864.
66. Kohn, W.; Sham, L. Phys. Rev. A 1965, 140, 1133.
67. Becke, A. D. Phys. Rev. A 1988, 38, 3098.
68. Lee, C. T.; Yang, W. T.; Parr, R. G. Phys. Rev. B 1988, 37, 785.
69. Wang, G. T.; Mui, C.; Tannaci, J. F.; Filler, M. A.; B, M. C.; F, B. S. J. Phys. Chem. B 2003, 107,12256.
70. Barone, V.; Cossi, M. J. Phys. Chem. A 1998, 102, 1995.
71. Cossi, M.; Rega. N.; Scalmani, G.; Barone, V. J. Comput. Chem. 2003, 24, 669-681.
72. CRC Handbook of Chemistry and Physics, 81st ed.; CRC Press LLC: Boca. Raton, FL, 2000-2001.
73. Frisch, M. J.; Trucks, G. W.; Schlegel, H. B.; Scuseria, G. E.; Robb, M. A.; Cheeseman, J. R.; Montgomery, J. J. A.; Vreven, T.; Kudin, K. N.; Burant, J. C.; Millam, J. M.; Iyengar, S. S.; Tomasi, J.; Barone, V.; Mennucci, B.; Cossi, M.; Scalmani, G.; Rega, N.; Petersson, G. A.; Nakatsuji, H.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Klene, M.; Li, X.; Knox, J. E.; Hratchian, H. P.; Cross, J. B.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R. E.; Yazyev, O.; Austin, A. J.; Cammi, R.; Pomelli, C.; Ochterski, J. W.; Ayala, P. Y.; Morokuma, K.; Voth, G. A.; Salvador, P.; Danenberg, J. J.; Zakrzewski, V. G.; Dapprich, S.; Daniels, A. D.; Strain, M. C.; Farkas, O.; Malick, D. K.; Rabuck, A. D.; Raghavachari, K.; Foresman, J. B.; Ortiz, J. V.; Cui, Q.; Baboul, A. G.; Clifford, S.; Cioslowski, J.; Sfefanov, B. B.; Liu, G.; Liashenko, A.; Piskorz, P.; Romaromi, I.; Martin, R. L.; Fox, D. J.; Keith, T.; Al-Laham, M. A.; Peng, C. Y.; Nanayakkara, A.; Challacombe, M.; Gill, P. M. W.; Johnson, B.; W., C.; Wong, M. W.; Andres, J. L.; Gonzalez, C.; Pople, J. A., Gaussian 03, revision B.3; Gaussian, Inc.: Pittsburgh, PA, 2003.
74. Himmelhause, M.; Gauss, I.; Buck, M.; Elisert, F.; Woll, C.; Grunze, M. J. Electron Specrosc. Relat. Phenom. 1998, 92, 139-149.
75. Adhikari, H.; McIntyre, P. C.; Shiyu, S.; Pianetta, P.; Chidsey, C. E. D. Appl. Phys. Lett. 2005, 87. 263109.
76. Yang, Y. W.; Fan, L. J. Langmuir 2002, 18, 1157-1164.
77. Ishida,T.; Choi, N.; Mizutani, W.; Tokumoto, H.; Kojima, I.; Azehara, H.; Hokari, H.; Akiba, U.; Fujihira, M. Langmuir 1999, 15, 6799-6806.
78. Vericat, C.; Vela, M. E.; Andreasen, G.; Salvarezza, R. C. Langmuir 2001, 17, 4919-4924.
79. Vericat, C.; Vela, M. E.; Benitez, G. A.; Martin Gago, J. A.; Torrelles, X.; Salvarezza, R. C. J. Phys.: Condem. Matter 2006, 18, R867-R900.
80. Whelan, C. M.; Malcolm, R. S.; Barnes, C. J. Langmuir 1999, 15, 116-126.
81. Willey, T. M.; Vance, A. L.; van Buuren, T.; Bostedt, C.; Terminello, L. J.; Fadley, C. S. Surf. Sci. 2005, 576, 188-196.
82. Chang, Z.; Tang, W. H. Surf Sci. 2007, 2005-2011.
83. Ishida, T.; Hara, M.; Kojima, I.; Tsuneda, S.; Nakoi, N.; Sasabe, H.; Knoll, W. Langmuir 1998, 14, 2092-2096.
84. Brito, R.; Tremont, R.; Feliciano, O.; Cabrera, C. R. J. Electroanal. Chem. 2003, 540, 53-59.
85. Petrovykh. D. Y.; Kimura-Suda, H.; Opdahl, A.; Richter, L. J.; Tarlov, M. J.; Whitman. L. J. Langmuir 2006, 22, 2578-2587.
86. Moulder, J. F.; Stickle, W. F.; Sobol, P. E.; Bomben, K. D. Handbook of X-ray Photoelectron Spectroscopy; Perkin-Elmer Corp. Physical Electronics Division: Eden Prairie, MN, 1992.
87. Sun, S. Germanium Surface Cleaning, Passivation, and Initial Oxidation. Ph.D. Thesis, Stanford University, 2007.
88. Ishida. T.; Nishida, N.; Tsuneda. S.; Hara, M.; Sasabe, H.; Knoll, W. Jpn. J. Appl. Phys. 1996, 35, L1710-L1713.
89. Park, J.-S.; Nguyen, A.; Barriet, D.; Shon, Y.-S.; Randall Lee, T. Langmuir 2005, 21, 2902-2911.
90. Vilcarromero, J.; Marques, F. C. Appl. Phys. A: Mater. Sci. Process. 2000, 70, 581-585.
91. Cao, R.; Yang, X.; Terry, J. Phys. Rev. B 1992, 45, 13749-13752.
92. It is also important to note that irradiated induced damage to the SAMs has been reported as the result of synchrotron radiation exposure. In fact, Ulman and coworkers reported appearance and growth of +1.2 eV in binding energy (-1.2 in KE) shifted peak (with respect to surface thiolates) after 1-alkanethiolate SAMs on Au(111) were exposed to synchrotron radiations and S(2p) core level was measured at ∼200 eV photon energy. ( Heister, K.; Zharnikov, M.; Grunze, M.; Johansson, L. S. O.; Ulman, A. Langmuir 2001, 17, 8-11) Such a shift was attributed to dialkyl sulfide moieties in the form of C ⋯ S-C. Such an effect is not expected to be the case in our study, since neither such peak shift value nor growth of such peaks was observed in the S(2p) core level scans.
93. Sieger, M. T.; Roesler, J. M.; Lin, D. S.; Miller, T.; Chiang, T.-C. Phys. Rev. Lett. 1994, 75, 3117-3120.