Hydrogermylation of alkenes and alkynes on hydride-terminated Ge(100) surfaces

Langmuir

Volumn 16, Issue 20, 2000, Pages 7737-7741

  Choi, Kwangwook ^a   Buriak, Jillian M ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL REACTIONS; CONTACT ANGLE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEAT TREATMENT; HYDRIDES; MONOLAYERS; SEMICONDUCTING GERMANIUM; SOLUTIONS; STABILITY; SURFACES; ULTRAVIOLET RADIATION;

ALKYNES; HYDRIDE TERMINATED GERMANIUM SURFACES; HYDROGERMYLATION; LEWIS ACID MEDIATED HYDROGERMYLATION; MESITYLENE; ORGANIC MONOLAYERS;

ORGANIC COMPOUNDS;

EID: 0034300027     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la000413d     Document Type: Article

References (38)

1. (a) Ulman, A. Ultrathin Organic Films; Academic Press: San Diego, CA, 1991.
2. (b) Sze, S. M. The Physics of Semiconductor Devices, 2nd ed.; Wiley: New York, 1981.
3. (c) Buczkowski, A.; Radzimski, Z. J.; Rozgonyi, G. A.; Shimura, F. J. Appl. Phys. 1991, 69, 6495.
4. (d) Bansal, A.; Lewis, N. S. J. Phys. Chem. B 1998, 102, 1067-1070.
5. (e) Bansal, A.; Lewis, N. S. J. Phys. Chem. B 1998, 102, 4058-4060.
6. Cullen, G. W.; Amick, J. A.; Gerlich, D. J. Electrochem. Soc. 1962, 109, 124. Organic monolayers have been prepared recently on Ge surface under UHVconditions: (a) Teplyakov, A. V.; Noah, P.: Lal, Y. A.; Bent, S. F. J. Am. Chem. Soc. 1998, 120, 7377.
7. Cullen, G. W.; Amick, J. A.; Gerlich, D. J. Electrochem. Soc. 1962, 109, 124. Organic monolayers have been prepared recently on Ge surface under UHVconditions: (a) Teplyakov, A. V.; Noah, P.: Lal, Y. A.; Bent, S. F. J. Am. Chem. Soc. 1998, 120, 7377.
8. (b) Hamers, R. J.; Hovis, J. S.; Greenlief, C. M.; Padowitz, D. F. Jpn. J. Appl. Phys. 1999, 38, 3879.
9. (c) Lee, S. W.; Nelen, L. N.; Ihm, H.; Scoggins, T.; Greenlief, C. M. Surf. Sci. 1998, 410, L773.
10. He, J.; Lu, Z.-H.; Mitchell, S. A.; Wayner, D. D. M. J. Am. Chem. Soc. 1998, 120, 2660-2661.
11. For a review of Si-C bond formation on Si surfaces, see: Buriak, J. M. J. Chem. Soc., Chem. Commun. 1999, 1051. Leading references for hydrosilylation on flat single-crystal Si surfaces: (a) Sieval, A. B.; Vleeming, V.; Zuilhof, H.; Sudhölter, E. J. R. Langmuir 1999, 15, 8288-8291.
12. For a review of Si-C bond formation on Si surfaces, see: Buriak, J. M. J. Chem. Soc., Chem. Commun. 1999, 1051. Leading references for hydrosilylation on flat single-crystal Si surfaces: (a) Sieval, A. B.; Vleeming, V.; Zuilhof, H.; Sudhölter, E. J. R. Langmuir 1999, 15, 8288-8291.
13. (b) Linford, M. R.; Fenter, P.; Eisenberger, P. M.; Chidsey, C. E. D. J. Am. Chem. Soc. 1995, 117, 3145-3155.
14. (c) Sieval, A. B.; Demirel, A. L.; Nissink, J. W. M.; Linford, M. R.; van der Maas, J. H.; de Jeu, W. H.; Zuilhof, H.; Sudhölter, E. J. R. Langmuir 1998, 14, 1759-1768.
15. (d) Sung, M. M.; Kluth, G. J.; Yauw, O. W.; Maboudian, R. Langmuir 1997, 13, 6164-6168.
16. (e) Linford, M. R.; Chidsey, C. E. D. J. Am. Chem Soc. 1993, 115, 12631-12632.
17. (f) Boukherroub, R.; Morin, S.; Bensebaa, F.; Wayner, D. D. M. Langmuir 1999, 15, 3831-3835.
18. (g) Zazzera, L. A.; Evans, J. F.; Deruelle, M.; Tirrell, M.; Kessel, C. R.; Mckeown, P. J. Electrochem. Soc. 1997, 144, 2184-2189.
19. (h) Effenberger, F.; Gotz, G.; Bidlingmaier, B.; Wezstein, M. Angew. Chem., Int. Ed. Engl. 1998, 37, 2462-2464.
20. Terry, J.; Linford, M. R.; Wigren, C.; Cao, R.; Pianetta, P.; Chidsey, C. E. D. Appl. Phys. Lett. 1997, 71, 1056.
21. (j) Terry, J.; Mo, R.; Wigren, C.; Cao, R.; Mount, G.; Pianetta, P.; Linford, M. R.; Chidsey, C. E. D. Nucl. Instrum. Methods. Phys. Res. Sect. B 1997, 133, 94.
22. (k) Cicero, R. L.; Linford, M. R.; Chidsey, C. E. D. Langmuir 2000, 16, 5688.
23. Hydrosilylation on porous silicon surfaces: (a) Buriak, J. M.; Allen, M. J. J. Am. Chem. Soc. 1998, 120, 1339-1340.
24. (b) Buriak, J. M.; Stewart, M. J.; Geders, T. W.; Allen, M. J.; Choi, H. C.; Smith, J.; Raftery, D.; Canham, L. T. J. Am. Chem. Soc. 1999, 121, 11491-11502.
25. (c) Stewart, M. P.; Buriak, J. M. Angew. Chem., Int. Ed. Engl. 1998, 37, 3257.
26. Bateman, J. E., Eagling, R. D., Worrall, B. R.; Horrocks, B. R.; Houlton, A. Angew. Chem., Int. Ed. Engl. 1998, 37, 2683.
27. Miyazaki, S.; Sakamoto, K; Shiba, K.; Horose, M. Thin Solid Films 1995, 255, 99-102.
28. Maroun, F.; Ozanam, F.; Chazalviel, J.-N. J. Phys. Chem. B 1999, 103, 5280-5288.
29. CRC Handbook of Chemistry and Physics, 74th ed.; Lied, D. R., Ed.; CRC Press: Boca Raton, FL, 1993.
30. Sailor, H. J.; Lee, E. J. Adv. Mater. 1997, 783.
31. Contact mode AFM studies indicate that the original commercial oxide terminated Ge crystal has a surface roughness on the order of 2-3 Å.
32. Holland, J. M.; Stewart, M. P.; Allen, M. J.; Buriak, J. M. J. Solid State Chem. 1999, 147, 251.
33. Robins, E. G.; Stewart, M. P.; Buriak, J. M. J. Chem. Soc., Chem. Commun. 1999, 2479.
34. Peter, A.; Smith, K.; Brown, H. C. Borane Reagents; Academic Press: San Diego, CA, 1988.
35. Bellamy, L. J. The Infra-Red Spectra of Complex Molecules; Methuen and Co.: New York, 1960.
36. Snyder, R. G.; Strauss, H. L.; Elliger, C. A. J. Phys. Chem. 1982, 86, 5145-5150.
37. (a) Asao, N.; Sudo, T.; Yamamoto, Y. J. Org. Chem. 1996, 61, 7654.
38. (b) Sudo, T.; Asao, N.; Gevorgyan, V.; Yamamoto, Y. J. Org. Chem. 1999, 64, 2494.