Formation of an oxide-free GeTiO2 interface by atomic layer deposition on brominated Ge

Applied Physics Letters

Volumn 92, Issue 25, 2008, Pages

  Ardalan, Pendar ^a   Pickett, Evan R ^a   Harris, James S ^a   Marshall, Ann F ^b   Bent, Stacey F ^a  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; BROMINE; DESORPTION; DIELECTRIC FILMS; GERMANIUM; OXIDE FILMS; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SCALE (DEPOSITS); TITANIUM; TITANIUM DIOXIDE; TITANIUM OXIDES;

ACCELERATED GROWTH; CRYSTALLINE ANATASE; INTERFACIAL OXIDES; TEMPERATURE DEPENDENCES; TI O2 FILMS; TITANIUM TETRACHLORIDES;

ATOMIC LAYER DEPOSITION;

EID: 46049120026     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2951608     Document Type: Article

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