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Applied Physics A: Materials Science and Processing

Volumn 70, Issue 4, 2000, Pages 403-406

Scanning tunnelling microscopy imaging and modification of hydrogen-passivated Ge(100) surfaces

(4) Lu, Y F a Mai, Z H a Song, W D a Chim, W K a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL MODIFICATION; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ETCHING; HYDROGEN; OXIDATION; SCANNING TUNNELING MICROSCOPY; SURFACE ROUGHNESS;

ROOT MEAN SQUARE ROUGHNESS; SCANNING NEAR FIELD OPTICAL MICROSCOPE; SCANNING PROBE MICROSCOPE; THERMAL OXIDATION;

SEMICONDUCTING GERMANIUM;

EID: 0034172195 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390051056 Document Type: Article

Times cited : (13)

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