Study of germanium surface in wet chemical solutions for surface cleaning applications

ECS Transactions

Volumn 1, Issue 3, 2006, Pages 214-219

  Kim, Jungyup ^a   Saraswat, Krishna ^a   Nishi, Yoshio ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); ETCHING; INTERFACIAL ENERGY; SURFACE CLEANING; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

RMS ROUGHNESS; WET CHEMICAL SOLUTIONS;

GERMANIUM;

EID: 32844455518     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. J.D. Plummer, M. D. Deal; and P.B. Griffin, Silicon VLSI Technology, p. 184, Prentice Hall, New Jersey (2000).
2. T.Ohmi, K. Kotani, A. Teramoto and M. Miyashita, IEEE Trans. on Electron. Devices, 39, p.537(1992).
3. A.Pirovano, A. L. Lacaita, G. Ghidini and G. Tallarrida, IEEE Elec Device Lett., 21, p.34 (2000).
4. M. Meuris, Jpn. J. Appl. Phys., 31, L1514 (1992).
5. T. Low, M. F. Li, C. Shen, Y. C. Yeo, Y. T. Hou and C. Zhu, Applied Physics Lett., 85, p.2402 (2004).
6. J. Lauerhaas, P. W. Mertens, T. Nicolosi, K. Kenis, W. Fyen, M. Heyns, Diffusion and Defect Data Part B (Solid State Phenomena, 76-77, p.251.
7. K. Prabhakaran and T. Ogino, Surface Science, 325, p.263 (1995).
8. H. Kobayashi, J. Ryuta, T. Shingyouji and Y. Shimanuki, Jpn. J. Appl. Phys., 32, L45 (1993).
9. K. R. Williams, K. Gupta and M. Wasilik, J. Microelectromechanical Systems, 12, p.761 (2003).