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Volumn 123-124, Issue , 1998, Pages 66-70
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An X-ray photoelectron spectroscopy study of the HF etching of native oxides on Ge(111) and Ge(100) surfaces
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Author keywords
Germanium; HF; Oxides; Passivation
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Indexed keywords
ELECTRON ENERGY LEVELS;
ETCHING;
HYDROFLUORIC ACID;
OXIDES;
PASSIVATION;
SEMICONDUCTOR GROWTH;
SURFACE TREATMENT;
X RAY PHOTOELECTRON SPECTROSCOPY;
OXIDE REGROWTH RATES;
GERMANIUM;
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EID: 0002889415
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(97)00511-4 Document Type: Article |
Times cited : (110)
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References (12)
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