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Volumn 25, Issue 4, 2009, Pages 2013-2025

Formation of alkanethiolate self-assembled monolayers at halide-terminated Ge surfaces

Author keywords

[No Author keywords available]

Indexed keywords

ALKANETHIOL; ALKANETHIOLATE; AMBIENT STABILITIES; GE SURFACES; GE(100); GE(100) SURFACE; NOVEL ROUTES; RE PASSIVATIONS; SAMS; SURFACE PASSIVATIONS; WATER CONTACT ANGLE MEASUREMENTS; WATER CONTACT ANGLES; X-RAY PHOTOELECTRON SPECTROSCOPIES;

EID: 65249126295     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la803468e     Document Type: Article
Times cited : (40)

References (113)
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    • Wet Chemical Cleaning of Germanium Surfaces for Growth of High-k Dielectrics
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    • (2006) MRS Spring Meeting , pp. 8-17
    • Rivillion, S.1    Chabal, Y.J.2    Amy, F.3    Kahn, A.4    Krugg, C.5    Kirsch, P.6
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    • Ulman, A. Chem. Rev. 1996, 96, 1533-1554.
    • (1996) Chem. Rev , vol.96 , pp. 1533-1554
    • Ulman, A.1
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    • 65249096514 scopus 로고    scopus 로고
    • The chemistry of the thiol group; John Wiley & Sons, Ltd.: Bristol, 1974; 1.
    • The chemistry of the thiol group; John Wiley & Sons, Ltd.: Bristol, 1974; Vol. 1.
  • 83
    • 0003998388 scopus 로고    scopus 로고
    • 81st ed, CRC press LLC: Boca Raton, Fl, U.S.A
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    • (2000) CRC Handbook of Chemistry and Physics
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    • A shift to higher binding energies is also expected for C - O-type bonding in alcohols and ethers. However, this peak is expected to exhibit a larger shift (+1.5 eV) than that observed in the spectrum (+1.0 V), indicating that the 2-propanol (IPA) solvent is not adsorbed at the surface at significant concentration.
    • A shift to higher binding energies is also expected for C - O-type bonding in alcohols and ethers. However, this peak is expected to exhibit a larger shift (+1.5 eV) than that observed in the spectrum (+1.0 V), indicating that the 2-propanol (IPA) solvent is not adsorbed at the surface at significant concentration.
  • 94
    • 84868935601 scopus 로고    scopus 로고
    • In fact, our XPS results show that increasing the concentration of ODT dissolved in IPA from 0.001 to 0.1 M resulted in an increase in the C/Ge atomic ratio from ∼0.73 to ∼1.42 for the Ge(111)-Cl terminated, ODT system. Also, an increase from ∼1.28 to ∼1.83 was observed at the (100) crystallographic orientation upon ODT concentration increase from 0.001 to 0.1 M
    • In fact, our XPS results show that increasing the concentration of ODT dissolved in IPA from 0.001 to 0.1 M resulted in an increase in the C/Ge atomic ratio from ∼0.73 to ∼1.42 for the Ge(111)-Cl terminated + ODT system. Also, an increase from ∼1.28 to ∼1.83 was observed at the (100) crystallographic orientation upon ODT concentration increase from 0.001 to 0.1 M.
  • 96
    • 65249160457 scopus 로고    scopus 로고
    • We have found that both higher ODT concentration and longer dipping time result in removal of more Br from the surface. XPS data exhibit higher growth in the C(1s) peak, which can be attributed to higher thiolate coverage as well as higher conversion in the reaction between thiol molecules and Br-ter-minated surface
    • We have found that both higher ODT concentration and longer dipping time result in removal of more Br from the surface. XPS data exhibit higher growth in the C(1s) peak, which can be attributed to higher thiolate coverage as well as higher conversion in the reaction between thiol molecules and Br-ter-minated surface.
  • 97
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    • Handbook of Auger Electron Spectroscopy
    • Physical Electronics Inc, Eden Prairie, MN
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.