Molecular self-assembly at bare semiconductor surfaces: Preparation and characterization of highly organized octadecanethiolate monolayers on GaAs(001)

Journal of the American Chemical Society

Volumn 128, Issue 15, 2006, Pages 5231-5243

  McGuiness, Christine L ^a   Shaporenko, Andrey ^b   Mars, Carole K ^a,c   Uppili, Sundararajan ^a   Zharnikov, Michael ^b   Allara, David L ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF HEIDELBERG   (Germany)

^c Novellus Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GOLD; HYDROPHOBICITY; ISOTOPES; LATTICE CONSTANTS; MONOLAYERS; SEMICONDUCTOR MATERIALS;

OCTADECANETHIOLATE MONOLAYERS; SURFACE LATTICE; THIOL MOLECULES;

SELF ASSEMBLY;

ALKYL GROUP; GALLIUM ARSENIDE; GOLD; GOLD 111; ISOTOPE; OCTADECANETHIOLATE; THIOL; THIOL DERIVATIVE; UNCLASSIFIED DRUG;

ADSORPTION; ARTICLE; CHEMICAL STRUCTURE; CONFORMATION; ENVIRONMENTAL TEMPERATURE; FILM; HIGH TEMPERATURE; HYDROPHOBICITY; LOW TEMPERATURE; REACTION ANALYSIS; REPRODUCIBILITY; SEMICONDUCTOR; STRUCTURE ANALYSIS; SYNTHESIS; THERMOSTABILITY; THICKNESS;

EID: 33646141401     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja058657d     Document Type: Article

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115. To directly image the tops of the molecules a minimum of 5 nN forces are typically used (e.g., for alkanethiolates/Au{111}). Use of these magnitude-forces consistently resulted in damage to the samples, and reducing normal forces below the damage point did not result in molecular resolution. He scattering is well-known to be extremely sensitive to surface roughness and requires atomically smooth surfaces to produce diffraction peaks. In preliminary experiments only diffuse scattering of the He atoms was observed with no evidence for diffraction peaks. (Danisman, F.; McGuiness, C.; Scoles, G.; Allara, D., unpublished results).
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117. Over an extended period working with this system, using many different preparation conditions, we have noticed that the alkanethiolate SAMs on GaAs(001) appear to fall into two classes of either a near vertical chain orientation or a highly tilted structure. This leads us to suspect that the GaAs surface is prone to reconstruction, especially at elevated temperatures, and that the process is somewhat driven by chain packing such that there are two preferred lattices with the lower temperature conditions leading to the spacings associated with near vertical chains.