Interface characterization of high-k dielectrics on Ge substrates

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 741-748

  Misra, D ^a   Garg, R ^a   Srinivasan, P ^a   Rahim, N ^a   Chowdhury, N A ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Ge HfO2 interface; Germanium; High k; NBTI; Surface nitridation; Thermal evaporation

Indexed keywords

CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GERMANIUM; NITRIDES;

GE/HFO2 INTERFACE; HIGH-K; INTERFACE QUALITY; NBTI;

DIELECTRIC MATERIALS;

EID: 33845212929     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.028     Document Type: Article

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