Sulfur passivation of Ge (0 0 1) surfaces and its effects on Schottky barrier contact

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 706-710

  Maeda, Tatsuro ^a   Takagi, Shinichi ^a,b   Ohnishi, Tsuyoshi ^b   Lippmaa, Mikk ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Ge surface; Schottky barrier; Sulfur passivation

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; PASSIVATION; SCHOTTKY BARRIER DIODES; SULFUR; SURFACE PHENOMENA; X RAY PHOTOELECTRON SPECTROSCOPY;

GE SURFACE; INTERFACE ELECTRICAL PROPERTIES; SIGNAL INTENSITY; SULFUR PASSIVATION;

GERMANIUM;

EID: 33845219228     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.025     Document Type: Article

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